IXFN90N30 Datasheet. Specs and Replacement
Type Designator: IXFN90N30 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 560 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 1800 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: SOT227B
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IXFN90N30 substitution
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IXFN90N30 datasheet
ixfn90n30.pdf
IXFN 90N30 VDSS = 300 V HiPerFETTM Power MOSFETs ID25 = 90 A RDS(on) = 33 m Single Die MOSFET D N-Channel Enhancement Mode trr 250 ns Avalanche Rated, High dv/dt, Low trr G Preliminary Data S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 300 V S VDGR TJ = 25 C to 150 C; RG... See More ⇒
ixfk100n20 ixfn90n20 ixfn106n20.pdf
VDSS ID25 RDS(on) HiPerFETTM IXFK 90 N 20 200 V 90 A 23 mW Power MOSFETs IXFN 100 N 20 200 V 100 A 23 mW IXFN 106 N 20 200 V 106 A 20 mW N-Channel Enhancement Mode trr 200 ns Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings TO-264 AA (IXFK) IXFK IXFN IXFN 90N20 100N20 106N20 VDSS TJ = 25 C to 150 C 200 200 200 V G (TAB) VDGR TJ = 25 C t... See More ⇒
ixfn94n50p2.pdf
Advance Technical Information PolarP2TM HiPerFETTM VDSS = 500V IXFN94N50P2 Power MOSFET ID25 = 68A RDS(on) 55m trr 250ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C, RGS = 1... See More ⇒
Detailed specifications: IXFN44N80, IXFN48N50, IXFN48N50U3, IXFN50N50, IXFN55N50, IXFN60N60, IXFN73N30, IXFN80N50, IRF640, IXFR10N100Q, IXFR120N20, IXFR12N100Q, IXFR15N80Q, IXFR180N07, IXFR180N085, IXFR180N10, IXFR24N100
Keywords - IXFN90N30 MOSFET specs
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