IXFN90N30 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFN90N30
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 560 W
Maximum Drain-Source Voltage |Vds|: 300 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 90 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 360 nC
Maximum Drain-Source On-State Resistance (Rds): 0.033 Ohm
Package: SOT227B
IXFN90N30 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFN90N30 Datasheet (PDF)
1.1. ixfn90n30.pdf 
Size:124K _ixys
IXFN 90N30 VDSS = 300 V HiPerFETTM Power MOSFETs ID25 = 90 A Ω RDS(on) = 33 mΩ Ω Ω Ω Single Die MOSFET D N-Channel Enhancement Mode ≤ trr ≤ ≤ 250 ns ≤ ≤ Avalanche Rated, High dv/dt, Low trr G Preliminary Data S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25°C to 150°C 300 V S VDGR TJ = 25°C to 150°C; RG
3.1. ixfk100n20 ixfn90n20 ixfn106n20.pdf Size:112K _ixys
VDSS ID25 RDS(on) HiPerFETTM IXFK 90 N 20 200 V 90 A 23 mW Power MOSFETs IXFN 100 N 20 200 V 100 A 23 mW IXFN 106 N 20 200 V 106 A 20 mW N-Channel Enhancement Mode trr ? 200 ns Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings TO-264 AA (IXFK) IXFK IXFN IXFN 90N20 100N20 106N20 VDSS TJ = 25C to 150C 200 200 200 V G (TAB) VDGR TJ = 25C to 150C
5.1. ixfn94n50p2.pdf Size:174K _ixys
Advance Technical Information PolarP2TM HiPerFETTM VDSS = 500V IXFN94N50P2 Power MOSFET ID25 = 68A RDS(on) 55m trr 250ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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