All MOSFET. STH110N10F7-6 Datasheet

 

 

STH110N10F7-6 Datasheet and Replacement


   Type Designator: STH110N10F7-6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 992 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: H2PAK-6
 

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STH110N10F7-6 Datasheet (PDF)

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STH110N10F7-6

STH110N10F7-2, STH110N10F7-6 N-channel 100 V, 4.9 m typ.,110 A, STripFET F7 Power MOSFETs in HPAK-2 and HPAK-6 packages Datasheet - production data TAB Features TABRDS(on) Order code VDS ID PTOT max. 72STH110N10F7-2 31 100 V 6.5 m 110 A 150 W 1STH110N10F7-6 H2PAK-6H2PAK-2Figure 1: Internal schematic diagram Among the lowest RDS(on) on the mar

Datasheet: STFW24N60M2 , STFW2N105K5 , STFW38N65M5 , STFW3N170 , STFW40N60M2 , STFW45N65M5 , STFW69N65M5 , STH110N10F7-2 , 5N60 , STH12N120K5-2 , STH130N10F3-2 , STH140N8F7-2 , STH150N10F7-2 , STH15NB50FI , STH160N4LF6-2 , STH170N8F7-2 , STH175N4F6-2AG .

History: IRFB3206G | SSFT4002 | NVMFD5873NL | NCEP4090GU | NVMFD5852NL | HSM20N02 | NCEP40P30K

Keywords - STH110N10F7-6 MOSFET datasheet

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