STH110N10F7-6 Datasheet and Replacement
Type Designator: STH110N10F7-6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 992 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: H2PAK-6
STH110N10F7-6 substitution
STH110N10F7-6 Datasheet (PDF)
sth110n10f7-2 sth110n10f7-6.pdf

STH110N10F7-2, STH110N10F7-6 N-channel 100 V, 4.9 m typ.,110 A, STripFET F7 Power MOSFETs in HPAK-2 and HPAK-6 packages Datasheet - production data TAB Features TABRDS(on) Order code VDS ID PTOT max. 72STH110N10F7-2 31 100 V 6.5 m 110 A 150 W 1STH110N10F7-6 H2PAK-6H2PAK-2Figure 1: Internal schematic diagram Among the lowest RDS(on) on the mar
Datasheet: STFW24N60M2 , STFW2N105K5 , STFW38N65M5 , STFW3N170 , STFW40N60M2 , STFW45N65M5 , STFW69N65M5 , STH110N10F7-2 , 10N65 , STH12N120K5-2 , STH130N10F3-2 , STH140N8F7-2 , STH150N10F7-2 , STH15NB50FI , STH160N4LF6-2 , STH170N8F7-2 , STH175N4F6-2AG .
History: SFG110N12KF | R6008FNX | TK16J60W | MMDF3N04HD | SQM110N04-04 | SST65R1K2S2E | SFP055N80C2
Keywords - STH110N10F7-6 MOSFET datasheet
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STH110N10F7-6 replacement
History: SFG110N12KF | R6008FNX | TK16J60W | MMDF3N04HD | SQM110N04-04 | SST65R1K2S2E | SFP055N80C2



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