STH110N10F7-6 Datasheet. Specs and Replacement

Type Designator: STH110N10F7-6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 992 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: H2PAK-6

STH110N10F7-6 substitution

- MOSFET ⓘ Cross-Reference Search

 

STH110N10F7-6 datasheet

 ..1. Size:858K  st
 sth110n10f7-2 sth110n10f7-6.pdf pdf_icon

STH110N10F7-6

STH110N10F7-2, STH110N10F7-6 N-channel 100 V, 4.9 m typ.,110 A, STripFET F7 Power MOSFETs in H PAK-2 and H PAK-6 packages Datasheet - production data TAB Features TAB RDS(on) Order code VDS ID PTOT max. 7 2 STH110N10F7-2 3 1 100 V 6.5 m 110 A 150 W 1 STH110N10F7-6 H2PAK-6 H2PAK-2 Figure 1 Internal schematic diagram Among the lowest RDS(on) on the mar... See More ⇒

Detailed specifications: STFW24N60M2, STFW2N105K5, STFW38N65M5, STFW3N170, STFW40N60M2, STFW45N65M5, STFW69N65M5, STH110N10F7-2, 5N60, STH12N120K5-2, STH130N10F3-2, STH140N8F7-2, STH150N10F7-2, STH15NB50FI, STH160N4LF6-2, STH170N8F7-2, STH175N4F6-2AG

Keywords - STH110N10F7-6 MOSFET specs

 STH110N10F7-6 cross reference

 STH110N10F7-6 equivalent finder

 STH110N10F7-6 pdf lookup

 STH110N10F7-6 substitution

 STH110N10F7-6 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.