STH130N10F3-2 Datasheet. Specs and Replacement

Type Designator: STH130N10F3-2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 373 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm

Package: H2PAK-2

STH130N10F3-2 substitution

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STH130N10F3-2 datasheet

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 stf130n10f3 stfi130n10f3 sth130n10f3-2 stp130n10f3.pdf pdf_icon

STH130N10F3-2

STF130N10F3, STFI130N10F3, STH130N10F3-2, STP130N10F3 N-channel 100 V, 7.8 m typ., 120 A STripFET III Power MOSFET in TO-220FP, I PAKFP, H PAK-2 and TO-220 packages Datasheet production data Features RDS(on) Order codes VDSS max. ID 3 STF130N10F3 2 1 9.6 m 46 A 1 2 STFI130N10F3 3 TO-220FP 100 V I PAKFP STH130N10F3-2 9.3 m TAB 120 A STP130N10F3 9.6 m TAB ... See More ⇒

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 sth13009.pdf pdf_icon

STH130N10F3-2

STH13009 High voltage fast-switching NPN power transistor Preliminary data . Features High voltage capability Low spread of dynamic parameters Very high switching speed Applications 3 Switching mode power supplies 2 1 TO-220 Description The device is manufactured using high voltage Figure 1. Internal schematic diagram Multi Epitaxial Planar technology for high ... See More ⇒

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 stw13nb60 sth13nb60fi.pdf pdf_icon

STH130N10F3-2

STW13NB60 STH13NB60FI N - CHANNEL 600V - 0.48 - 13A - TO-247/ISOWATT218 PowerMESH MOSFET TYPE VDSS RDS(on) ID STW13NB60 600 V ... See More ⇒

Detailed specifications: STFW38N65M5, STFW3N170, STFW40N60M2, STFW45N65M5, STFW69N65M5, STH110N10F7-2, STH110N10F7-6, STH12N120K5-2, SI2302, STH140N8F7-2, STH150N10F7-2, STH15NB50FI, STH160N4LF6-2, STH170N8F7-2, STH175N4F6-2AG, STH175N4F6-6AG, STH180N10F3-6

Keywords - STH130N10F3-2 MOSFET specs

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