STH160N4LF6-2 Datasheet. Specs and Replacement

Type Designator: STH160N4LF6-2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 131 nS

Cossⓘ - Output Capacitance: 770 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm

Package: H2PAK-2

STH160N4LF6-2 substitution

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STH160N4LF6-2 datasheet

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STH160N4LF6-2

STH160N4LF6-2 N-channel 40 V, 0.0018 m typ., 120 A, STripFET VI DeepGATE Power MOSFET in a H PAK-2 package Datasheet - production data Features Order code VDS RDS(on) max ID PTOT STH160N4LF6-2 40 V 0.0022 120 A 150 W TAB RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) 2 3 1 Logic level drive H2PAK-2 High avalanche ruggedness 1... See More ⇒

Detailed specifications: STFW69N65M5, STH110N10F7-2, STH110N10F7-6, STH12N120K5-2, STH130N10F3-2, STH140N8F7-2, STH150N10F7-2, STH15NB50FI, IRF520, STH170N8F7-2, STH175N4F6-2AG, STH175N4F6-6AG, STH180N10F3-6, STH185N10F3-2, STH185N10F3-6, STH240N10F7-2, STH240N10F7-6

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