All MOSFET. STH160N4LF6-2 Datasheet

 

STH160N4LF6-2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STH160N4LF6-2
   Marking Code: 160N4LF6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 181 nC
   trⓘ - Rise Time: 131 nS
   Cossⓘ - Output Capacitance: 770 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: H2PAK-2

 STH160N4LF6-2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STH160N4LF6-2 Datasheet (PDF)

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 sth160n4lf6-2.pdf

STH160N4LF6-2 STH160N4LF6-2

STH160N4LF6-2N-channel 40 V, 0.0018 m typ., 120 A, STripFET VIDeepGATE Power MOSFET in a HPAK-2 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max ID PTOTSTH160N4LF6-2 40 V 0.0022 120 A 150 WTAB RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on)231 Logic level driveH2PAK-2 High avalanche ruggedness 1

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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