All MOSFET. STH160N4LF6-2 Datasheet

 

STH160N4LF6-2 Datasheet and Replacement


   Type Designator: STH160N4LF6-2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 131 nS
   Cossⓘ - Output Capacitance: 770 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: H2PAK-2
 

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STH160N4LF6-2 Datasheet (PDF)

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STH160N4LF6-2

STH160N4LF6-2N-channel 40 V, 0.0018 m typ., 120 A, STripFET VIDeepGATE Power MOSFET in a HPAK-2 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max ID PTOTSTH160N4LF6-2 40 V 0.0022 120 A 150 WTAB RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on)231 Logic level driveH2PAK-2 High avalanche ruggedness 1

Datasheet: STFW69N65M5 , STH110N10F7-2 , STH110N10F7-6 , STH12N120K5-2 , STH130N10F3-2 , STH140N8F7-2 , STH150N10F7-2 , STH15NB50FI , CS150N03A8 , STH170N8F7-2 , STH175N4F6-2AG , STH175N4F6-6AG , STH180N10F3-6 , STH185N10F3-2 , STH185N10F3-6 , STH240N10F7-2 , STH240N10F7-6 .

History: IPP114N03LG | IPP085N06LG | IPP100N08S2-07 | IRFH5304 | MTE150P20H8 | HYG082N03LR1C1 | IRF7343QTR

Keywords - STH160N4LF6-2 MOSFET datasheet

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