All MOSFET. STH185N10F3-2 Datasheet

 

STH185N10F3-2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STH185N10F3-2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 315 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 97.1 nS
   Cossⓘ - Output Capacitance: 786 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: H2PAK-2

 STH185N10F3-2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STH185N10F3-2 Datasheet (PDF)

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sth185n10f3-2.pdf

STH185N10F3-2 STH185N10F3-2

STH185N10F3-2Automotive-grade N-channel 100 V, 180 A, 3.9 m typ., STripFET F3 Power MOSFET in a H2PAK-2 packageDatasheet - production dataFeaturesVDS RDS(on) max. IDOrder codeTABSTH185N10F3-2 100 V 4.5 m 180 A Designed for automotive applications and 2AEC-Q101 qualified31 Ultra low on-resistanceH2PAK-2 100% avalanche testedApplications Swi

 2.1. Size:974K  st
sth185n10f3-6.pdf

STH185N10F3-2 STH185N10F3-2

STH185N10F3-6Automotive-grade N-channel 100 V, 180 A, 3.9 m typ., STripFET F3 Power MOSFET in a H2PAK-6 packageDatasheet - production dataFeatures VDS RDS(on) max. IDOrder codeTABSTH185N10F3-6 100 V 4.5 m 180 A Designed for automotive applications and 7 AEC-Q101 qualified1 Ultra low on-resistanceH2PAK-6 100% avalanche testedApplications Switchi

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sth180n10f3-6.pdf

STH185N10F3-2 STH185N10F3-2

STH180N10F3-6N-channel 100 V, 3.9 m, 180 A, HPAK-6STripFETIII Power MOSFETFeaturesRDS(on) Order codes VDSS IDTABmax.STH180N10F3-6 100 V 4.5 m 180 A Ultra low on-resistance7 100% avalanche tested1ApplicationsH2PAK-6 High current switching applicationsDescriptionThis device is an N-channel enhancement mode Figure 1. Internal schematic diagra

 9.2. Size:645K  st
sth180n10f3-2.pdf

STH185N10F3-2 STH185N10F3-2

STH180N10F3-2 N-channel 100 V, 3.9 m typ.,180 A, STripFET F3 Power MOSFET in HPAK-2 package Datasheet - production data Features RDS(on) Order code VDS ID max. STH180N10F3-2 100 V 4.5 m 180 A Ultra low on-resistence 100% avalanche tested Applications Switching applications Figure 1: Internal schematic diagram Description This device is an N-cha

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: HGB045N15S

 

 
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