STH185N10F3-2 MOSFET. Datasheet pdf. Equivalent
Type Designator: STH185N10F3-2
Marking Code: 185N10F3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 315 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 180 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 114.6 nC
trⓘ - Rise Time: 97.1 nS
Cossⓘ - Output Capacitance: 786 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: H2PAK-2
STH185N10F3-2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STH185N10F3-2 Datasheet (PDF)
sth185n10f3-2.pdf
STH185N10F3-2Automotive-grade N-channel 100 V, 180 A, 3.9 m typ., STripFET F3 Power MOSFET in a H2PAK-2 packageDatasheet - production dataFeaturesVDS RDS(on) max. IDOrder codeTABSTH185N10F3-2 100 V 4.5 m 180 A Designed for automotive applications and 2AEC-Q101 qualified31 Ultra low on-resistanceH2PAK-2 100% avalanche testedApplications Swi
sth185n10f3-6.pdf
STH185N10F3-6Automotive-grade N-channel 100 V, 180 A, 3.9 m typ., STripFET F3 Power MOSFET in a H2PAK-6 packageDatasheet - production dataFeatures VDS RDS(on) max. IDOrder codeTABSTH185N10F3-6 100 V 4.5 m 180 A Designed for automotive applications and 7 AEC-Q101 qualified1 Ultra low on-resistanceH2PAK-6 100% avalanche testedApplications Switchi
sth180n10f3-6.pdf
STH180N10F3-6N-channel 100 V, 3.9 m, 180 A, HPAK-6STripFETIII Power MOSFETFeaturesRDS(on) Order codes VDSS IDTABmax.STH180N10F3-6 100 V 4.5 m 180 A Ultra low on-resistance7 100% avalanche tested1ApplicationsH2PAK-6 High current switching applicationsDescriptionThis device is an N-channel enhancement mode Figure 1. Internal schematic diagra
sth180n10f3-2.pdf
STH180N10F3-2 N-channel 100 V, 3.9 m typ.,180 A, STripFET F3 Power MOSFET in HPAK-2 package Datasheet - production data Features RDS(on) Order code VDS ID max. STH180N10F3-2 100 V 4.5 m 180 A Ultra low on-resistence 100% avalanche tested Applications Switching applications Figure 1: Internal schematic diagram Description This device is an N-cha
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