All MOSFET. STH240N75F3-2 Datasheet

 

STH240N75F3-2 Datasheet and Replacement


   Type Designator: STH240N75F3-2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: H2PAK-2
 

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STH240N75F3-2 Datasheet (PDF)

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STH240N75F3-2

STH240N75F3-2, STH240N75F3-6N-channel 75 V, 2.6 m typ., 180 A STripFET III Power MOSFET in HPAK-2 and HPAK-6 packagesDatasheet - production dataFeaturesRDS(on) Order code VDSS max. ID TABSTH240N75F3-275 V

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sth240n10f7-2 sth240n10f7-6.pdf pdf_icon

STH240N75F3-2

STH240N10F7-2, STH240N10F7-6N-channel 100 V, 0.002 typ., 180 A STripFET F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packagesDatasheet - production dataFeaturesOrder codes VDS RDS(on)max. IDSTH240N10F7-2TABTAB 100 V 0.0025 180 ASTH240N10F7-6 Ultra low on-resistance273 100% avalanche tested11H2PAK-2H2PAK-6Applications High current switchin

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sth245n75f3-6.pdf pdf_icon

STH240N75F3-2

STH245N75F3-6Automotive-grade N-channel 75 V, 2.6 m typ., 180 A STripFET F3 Power MOSFET in a HPAK-6 packageDatasheet - production dataFeatures Order code VDS RDS(on) max. IDTABSTH245N75F3-6 75 V 3.0 m 180 A Designed for automotive applications and AEC-Q101 qualified7 Conduction losses reduced1 Low profile, very low parasitic inductanceH2PAK-6A

Datasheet: STH170N8F7-2 , STH175N4F6-2AG , STH175N4F6-6AG , STH180N10F3-6 , STH185N10F3-2 , STH185N10F3-6 , STH240N10F7-2 , STH240N10F7-6 , IRF730 , STH240N75F3-6 , STH245N75F3-6 , STH260N6F6-6 , STH265N6F6-2AG , STH265N6F6-6AG , STH270N4F3-2 , STH270N8F7-2 , STH270N8F7-6 .

History: RCD075N20

Keywords - STH240N75F3-2 MOSFET datasheet

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