STH240N75F3-2 Datasheet and Replacement
Type Designator: STH240N75F3-2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 180 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 1100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: H2PAK-2
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STH240N75F3-2 Datasheet (PDF)
sth240n75f3-2 sth240n75f3-6.pdf

STH240N75F3-2, STH240N75F3-6N-channel 75 V, 2.6 m typ., 180 A STripFET III Power MOSFET in HPAK-2 and HPAK-6 packagesDatasheet - production dataFeaturesRDS(on) Order code VDSS max. ID TABSTH240N75F3-275 V
sth240n10f7-2 sth240n10f7-6.pdf

STH240N10F7-2, STH240N10F7-6N-channel 100 V, 0.002 typ., 180 A STripFET F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packagesDatasheet - production dataFeaturesOrder codes VDS RDS(on)max. IDSTH240N10F7-2TABTAB 100 V 0.0025 180 ASTH240N10F7-6 Ultra low on-resistance273 100% avalanche tested11H2PAK-2H2PAK-6Applications High current switchin
sth245n75f3-6.pdf

STH245N75F3-6Automotive-grade N-channel 75 V, 2.6 m typ., 180 A STripFET F3 Power MOSFET in a HPAK-6 packageDatasheet - production dataFeatures Order code VDS RDS(on) max. IDTABSTH245N75F3-6 75 V 3.0 m 180 A Designed for automotive applications and AEC-Q101 qualified7 Conduction losses reduced1 Low profile, very low parasitic inductanceH2PAK-6A
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: MCH3484 | DMN30H4D0L
Keywords - STH240N75F3-2 MOSFET datasheet
STH240N75F3-2 cross reference
STH240N75F3-2 equivalent finder
STH240N75F3-2 lookup
STH240N75F3-2 substitution
STH240N75F3-2 replacement
History: MCH3484 | DMN30H4D0L



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