STH240N75F3-2 Datasheet. Specs and Replacement

Type Designator: STH240N75F3-2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: H2PAK-2

STH240N75F3-2 substitution

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STH240N75F3-2 datasheet

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STH240N75F3-2

STH240N75F3-2, STH240N75F3-6 N-channel 75 V, 2.6 m typ., 180 A STripFET III Power MOSFET in H PAK-2 and H PAK-6 packages Datasheet - production data Features RDS(on) Order code VDSS max. ID TAB STH240N75F3-2 75 V ... See More ⇒

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 sth240n10f7-2 sth240n10f7-6.pdf pdf_icon

STH240N75F3-2

STH240N10F7-2, STH240N10F7-6 N-channel 100 V, 0.002 typ., 180 A STripFET F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages Datasheet - production data Features Order codes VDS RDS(on)max. ID STH240N10F7-2 TAB TAB 100 V 0.0025 180 A STH240N10F7-6 Ultra low on-resistance 2 7 3 100% avalanche tested 1 1 H2PAK-2 H2PAK-6 Applications High current switchin... See More ⇒

 9.1. Size:863K  st
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STH240N75F3-2

STH245N75F3-6 Automotive-grade N-channel 75 V, 2.6 m typ., 180 A STripFET F3 Power MOSFET in a H PAK-6 package Datasheet - production data Features Order code VDS RDS(on) max. ID TAB STH245N75F3-6 75 V 3.0 m 180 A Designed for automotive applications and AEC-Q101 qualified 7 Conduction losses reduced 1 Low profile, very low parasitic inductance H2PAK-6 A... See More ⇒

Detailed specifications: STH170N8F7-2, STH175N4F6-2AG, STH175N4F6-6AG, STH180N10F3-6, STH185N10F3-2, STH185N10F3-6, STH240N10F7-2, STH240N10F7-6, IRFB31N20D, STH240N75F3-6, STH245N75F3-6, STH260N6F6-6, STH265N6F6-2AG, STH265N6F6-6AG, STH270N4F3-2, STH270N8F7-2, STH270N8F7-6

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