All MOSFET. IXFR24N100 Datasheet

 

IXFR24N100 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFR24N100

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 416 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V

Maximum Drain Current |Id|: 22 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 267 nC

Maximum Drain-Source On-State Resistance (Rds): 0.39 Ohm

Package: TO247

IXFR24N100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IXFR24N100 Datasheet (PDF)

1.1. ixfr24n100q3.pdf Size:141K _ixys

IXFR24N100
IXFR24N100

Advance Technical Information HiperFETTM VDSS = 1000V IXFR24N100Q3 Power MOSFET ID25 = 18A ≤ Ω Q3-Class RDS(on) ≤ 490mΩ ≤ Ω ≤ Ω ≤ Ω ≤ trr ≤ 300ns ≤ ≤ ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, R

1.2. ixfr24n100.pdf Size:112K _ixys

IXFR24N100
IXFR24N100

HiPerFETTM Power VDSS = 1000V IXFR24N100 ID25 = 22A MOSFET ≤ Ω RDS(on) ≤ Ω ≤ 390mΩ ≤ Ω ≤ Ω ISOPLUS247TM ≤ t ≤ ≤ 250ns ≤ ≤ (Electrically Isolated Back Surface) rr N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Co

 3.1. ixfr24n80p.pdf Size:94K _ixys

IXFR24N100
IXFR24N100

IXFR 24N80P VDSS = 800 V PolarHVTM HiPerFET ID25 = 13 A Power MOSFET ? ? RDS(on) ? 420 m? ? ? ? ? ? ? (Electrically Isolated Back Surface) ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V VGSS Continuous

3.2. ixfr24n50 ixfr26n50.pdf Size:33K _ixys

IXFR24N100
IXFR24N100

Advanced Technical Information VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 26N50 500 V 24 A 0.20 W ISOPLUS247TM IXFR 24N50 500 V 22 A 0.23 W (Electrically Isolated Back Surface) trr £ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 50

 3.3. ixfr24n50q ixfr26n50q.pdf Size:78K _ixys

IXFR24N100
IXFR24N100

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs Ω IXFR 26N50Q 500 V 24 A 0.20 Ω Ω Ω Ω ISOPLUS247TM Ω IXFR 24N50Q 500 V 22 A 0.23 Ω Ω Ω Ω (Electrically Isolated Back Surface) ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode High dV/dt, Low t , HDMOSTM Family rr Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25°C to 150°C

Datasheet: IXFN90N30 , IXFR10N100Q , IXFR120N20 , IXFR12N100Q , IXFR15N80Q , IXFR180N07 , IXFR180N085 , IXFR180N10 , RFP50N06 , IXFR24N50 , IXFR24N50Q , IXFR26N50 , IXFR26N50Q , IXFR30N50Q , IXFR32N50Q , IXFR50N50 , IXFR55N50 .

 
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