IXFR24N100 Datasheet. Specs and Replacement

Type Designator: IXFR24N100  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 416 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 785 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm

Package: TO247

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IXFR24N100 substitution

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IXFR24N100 datasheet

 ..1. Size:112K  ixys
 ixfr24n100.pdf pdf_icon

IXFR24N100

HiPerFETTM Power VDSS = 1000V IXFR24N100 ID25 = 22A MOSFET RDS(on) 390m ISOPLUS247TM t 250ns (Electrically Isolated Back Surface) rr N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Co... See More ⇒

 0.1. Size:141K  ixys
 ixfr24n100q3.pdf pdf_icon

IXFR24N100

Advance Technical Information HiperFETTM VDSS = 1000V IXFR24N100Q3 Power MOSFET ID25 = 18A Q3-Class RDS(on) 490m trr 300ns (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C, R... See More ⇒

 7.1. Size:94K  ixys
 ixfr24n80p.pdf pdf_icon

IXFR24N100

IXFR 24N80P VDSS = 800 V PolarHVTM HiPerFET ID25 = 13 A Power MOSFET RDS(on) 420 m (Electrically Isolated Back Surface) trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RG... See More ⇒

 7.2. Size:33K  ixys
 ixfr24n50 ixfr26n50.pdf pdf_icon

IXFR24N100

Advanced Technical Information VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 26N50 500 V 24 A 0.20 W ISOPLUS247TM IXFR 24N50 500 V 22 A 0.23 W (Electrically Isolated Back Surface) trr 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 50... See More ⇒

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Detailed specifications: IXFN90N30, IXFR10N100Q, IXFR120N20, IXFR12N100Q, IXFR15N80Q, IXFR180N07, IXFR180N085, IXFR180N10, IRF3710, IXFR24N50, IXFR24N50Q, IXFR26N50, IXFR26N50Q, IXFR30N50Q, IXFR32N50Q, IXFR50N50, IXFR55N50

Keywords - IXFR24N100 MOSFET specs

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