STH310N10F7-2 Datasheet. Specs and Replacement

Type Designator: STH310N10F7-2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 315 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 108 nS

Cossⓘ - Output Capacitance: 3500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm

Package: H2PAK-2

STH310N10F7-2 substitution

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STH310N10F7-2 datasheet

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 sth310n10f7-2 sth310n10f7-6.pdf pdf_icon

STH310N10F7-2

STH310N10F7-2, STH310N10F7-6 N-channel 100 V, 1.9 m typ.,180 A, STripFET F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages Datasheet - production data TAB Features TAB Order code V R max. I DS DS(on) D STH310N10F7-2 7 100 V 2.3 m 180 A 2 STH310N10F7-6 3 1 1 H2PAK-6 H2PAK-2 Among the lowest RDS(on) on the market Figure 1 Internal schematic diagram ... See More ⇒

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 sth315n10f7-2 sth315n10f7-6.pdf pdf_icon

STH310N10F7-2

STH315N10F7-2, STH315N10F7-6 Automotive-grade N-channel 100 V, 2.1 m typ., 180 A STripFET F7 Power MOSFETs Datasheet - production data Features VDS RDS(on) max. ID Order codes TAB TAB STH315N10F7-2 100 V 2.3 m 180 A STH315N10F7-6 2 7 3 Designed for automotive applications and 1 1 AEC-Q101 qualified 2 2 H PAK-6 H PAK-2 Among the lowest RDS(on) on the marke... See More ⇒

Detailed specifications: STH260N6F6-6, STH265N6F6-2AG, STH265N6F6-6AG, STH270N4F3-2, STH270N8F7-2, STH270N8F7-6, STH275N8F7-2AG, STH275N8F7-6AG, K2611, STH310N10F7-6, STH315N10F7-2, STH315N10F7-6, STH320N4F6-2, STH320N4F6-6, STH360N4F6-2, STH3N150-2, STH400N4F6-2

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