All MOSFET. STH315N10F7-2 Datasheet

 

STH315N10F7-2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STH315N10F7-2
   Marking Code: 315N10F7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 315 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 180 nC
   trⓘ - Rise Time: 108 nS
   Cossⓘ - Output Capacitance: 3500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: H2PAK-2

 STH315N10F7-2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STH315N10F7-2 Datasheet (PDF)

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 sth315n10f7-2 sth315n10f7-6.pdf

STH315N10F7-2 STH315N10F7-2

STH315N10F7-2, STH315N10F7-6Automotive-grade N-channel 100 V, 2.1 m typ., 180 A STripFET F7 Power MOSFETsDatasheet - production dataFeaturesVDS RDS(on) max. IDOrder codesTAB TABSTH315N10F7-2100 V 2.3 m 180 ASTH315N10F7-6273 Designed for automotive applications and 11AEC-Q101 qualified2 2H PAK-6H PAK-2 Among the lowest RDS(on) on the marke

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 sth310n10f7-2 sth310n10f7-6.pdf

STH315N10F7-2 STH315N10F7-2

STH310N10F7-2, STH310N10F7-6 N-channel 100 V, 1.9 m typ.,180 A, STripFET F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages Datasheet - production data TAB Features TABOrder code V R max. I DS DS(on) DSTH310N10F7-2 7100 V 2.3 m 180 A 2STH310N10F7-6 311H2PAK-6H2PAK-2 Among the lowest RDS(on) on the market Figure 1: Internal schematic diagram

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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