STH315N10F7-2 Datasheet and Replacement
Type Designator: STH315N10F7-2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 315 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 108 nS
Cossⓘ - Output Capacitance: 3500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
Package: H2PAK-2
STH315N10F7-2 substitution
STH315N10F7-2 Datasheet (PDF)
sth315n10f7-2 sth315n10f7-6.pdf

STH315N10F7-2, STH315N10F7-6Automotive-grade N-channel 100 V, 2.1 m typ., 180 A STripFET F7 Power MOSFETsDatasheet - production dataFeaturesVDS RDS(on) max. IDOrder codesTAB TABSTH315N10F7-2100 V 2.3 m 180 ASTH315N10F7-6273 Designed for automotive applications and 11AEC-Q101 qualified2 2H PAK-6H PAK-2 Among the lowest RDS(on) on the marke
sth310n10f7-2 sth310n10f7-6.pdf

STH310N10F7-2, STH310N10F7-6 N-channel 100 V, 1.9 m typ.,180 A, STripFET F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages Datasheet - production data TAB Features TABOrder code V R max. I DS DS(on) DSTH310N10F7-2 7100 V 2.3 m 180 A 2STH310N10F7-6 311H2PAK-6H2PAK-2 Among the lowest RDS(on) on the market Figure 1: Internal schematic diagram
Datasheet: STH265N6F6-6AG , STH270N4F3-2 , STH270N8F7-2 , STH270N8F7-6 , STH275N8F7-2AG , STH275N8F7-6AG , STH310N10F7-2 , STH310N10F7-6 , MMD60R360PRH , STH315N10F7-6 , STH320N4F6-2 , STH320N4F6-6 , STH360N4F6-2 , STH3N150-2 , STH400N4F6-2 , STH400N4F6-6 , STH7NA90FI .
History: SWD4N65K2 | KIA730H-220 | WMR140NV6LG4 | IRL540NLPBF | SNN1120L10Q | STB46NF30 | IPL60R185P7
Keywords - STH315N10F7-2 MOSFET datasheet
STH315N10F7-2 cross reference
STH315N10F7-2 equivalent finder
STH315N10F7-2 lookup
STH315N10F7-2 substitution
STH315N10F7-2 replacement
History: SWD4N65K2 | KIA730H-220 | WMR140NV6LG4 | IRL540NLPBF | SNN1120L10Q | STB46NF30 | IPL60R185P7



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