All MOSFET. STH320N4F6-2 Datasheet

 

STH320N4F6-2 Datasheet and Replacement


   Type Designator: STH320N4F6-2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 98 nS
   Cossⓘ - Output Capacitance: 1870 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0013 Ohm
   Package: H2PAK-2
 

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STH320N4F6-2 Datasheet (PDF)

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STH320N4F6-2

STH320N4F6-2, STH320N4F6-6N-channel 40 V, 1.1 m typ., 200 A, HPAK-2, HPAK-6 STripFET VI DeepGATE Power MOSFETDatasheet production dataFeaturesOrder codes VDS RDS(on) max ID(1)TABSTH320N4F6-2TAB40 V 1.3 m 200 ASTH320N4F6-61. Current limited by package.723 Standard threshold drive 11 100% avalanche testedH2PAK-6H2PAK-2Applications

Datasheet: STH270N8F7-2 , STH270N8F7-6 , STH275N8F7-2AG , STH275N8F7-6AG , STH310N10F7-2 , STH310N10F7-6 , STH315N10F7-2 , STH315N10F7-6 , HY1906P , STH320N4F6-6 , STH360N4F6-2 , STH3N150-2 , STH400N4F6-2 , STH400N4F6-6 , STH7NA90FI , STH80N10F7-2 , STH8NA80FI .

History: IPP037N08N3 | NCEP045N10F

Keywords - STH320N4F6-2 MOSFET datasheet

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