STH320N4F6-2 MOSFET. Datasheet pdf. Equivalent
Type Designator: STH320N4F6-2
Marking Code: 320N4F6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 200 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 240 nC
trⓘ - Rise Time: 98 nS
Cossⓘ - Output Capacitance: 1870 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0013 Ohm
Package: H2PAK-2
STH320N4F6-2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STH320N4F6-2 Datasheet (PDF)
..1. Size:1066K st
sth320n4f6-2 sth320n4f6-6.pdf
sth320n4f6-2 sth320n4f6-6.pdf
STH320N4F6-2, STH320N4F6-6N-channel 40 V, 1.1 m typ., 200 A, HPAK-2, HPAK-6 STripFET VI DeepGATE Power MOSFETDatasheet production dataFeaturesOrder codes VDS RDS(on) max ID(1)TABSTH320N4F6-2TAB40 V 1.3 m 200 ASTH320N4F6-61. Current limited by package.723 Standard threshold drive 11 100% avalanche testedH2PAK-6H2PAK-2Applications
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