STH320N4F6-6 Datasheet. Specs and Replacement

Type Designator: STH320N4F6-6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 98 nS

Cossⓘ - Output Capacitance: 1870 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0013 Ohm

Package: H2PAK-6

STH320N4F6-6 substitution

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STH320N4F6-6 datasheet

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STH320N4F6-6

STH320N4F6-2, STH320N4F6-6 N-channel 40 V, 1.1 m typ., 200 A, H PAK-2, H PAK-6 STripFET VI DeepGATE Power MOSFET Datasheet production data Features Order codes VDS RDS(on) max ID(1) TAB STH320N4F6-2 TAB 40 V 1.3 m 200 A STH320N4F6-6 1. Current limited by package. 7 2 3 Standard threshold drive 1 1 100% avalanche tested H2PAK-6 H2PAK-2 Applications ... See More ⇒

Detailed specifications: STH270N8F7-6, STH275N8F7-2AG, STH275N8F7-6AG, STH310N10F7-2, STH310N10F7-6, STH315N10F7-2, STH315N10F7-6, STH320N4F6-2, AO4407A, STH360N4F6-2, STH3N150-2, STH400N4F6-2, STH400N4F6-6, STH7NA90FI, STH80N10F7-2, STH8NA80FI, IRHG567110

Keywords - STH320N4F6-6 MOSFET specs

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