All MOSFET. STH320N4F6-6 Datasheet

 

STH320N4F6-6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STH320N4F6-6
   Marking Code: 320N4F6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 200 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 240 nC
   trⓘ - Rise Time: 98 nS
   Cossⓘ - Output Capacitance: 1870 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0013 Ohm
   Package: H2PAK-6

 STH320N4F6-6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STH320N4F6-6 Datasheet (PDF)

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 sth320n4f6-2 sth320n4f6-6.pdf

STH320N4F6-6 STH320N4F6-6

STH320N4F6-2, STH320N4F6-6N-channel 40 V, 1.1 m typ., 200 A, HPAK-2, HPAK-6 STripFET VI DeepGATE Power MOSFETDatasheet production dataFeaturesOrder codes VDS RDS(on) max ID(1)TABSTH320N4F6-2TAB40 V 1.3 m 200 ASTH320N4F6-61. Current limited by package.723 Standard threshold drive 11 100% avalanche testedH2PAK-6H2PAK-2Applications

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SLP10N65S

 

 
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