STH3N150-2 Datasheet. Specs and Replacement

Type Designator: STH3N150-2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47 nS

Cossⓘ - Output Capacitance: 102 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm

Package: H2PAK-2

STH3N150-2 substitution

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STH3N150-2 datasheet

 ..1. Size:672K  st
 stfw3n150 sth3n150-2 stp3n150 stw3n150.pdf pdf_icon

STH3N150-2

STFW3N150, STH3N150-2 STP3N150, STW3N150 Datasheet N-channel 1500 V, 2.5 A, 6 typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages Features TAB VDS RDS(on) max. ID PTOT Order codes 2 3 1 3 STFW3N150 63 W 2 2 H PAK-2 1 STH3N150-2 TO-3PF 1500 V 9 2.5 A STP3N150 140 W TAB STW3N150 3 3 100% avalanche tested 2 2 1 1 TO-220 ... See More ⇒

 ..2. Size:1056K  st
 sth3n150-2.pdf pdf_icon

STH3N150-2

STFW3N150, STH3N150-2, STP3N150, STW3N150 N-channel 1500 V, 2.5 A, 6 typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages Datasheet - production data Features TAB Order codes VDS RDS(on) max. ID PTOT 1 1 1 2 3 1 3 STFW3N150 63 W 2 2 H PAK-2 1 STH3N150-2 1500 V 9 2.5 A TO-3PF STP3N150 140 W TAB STW3N150 100% avalanche tested 3 3 ... See More ⇒

Detailed specifications: STH275N8F7-6AG, STH310N10F7-2, STH310N10F7-6, STH315N10F7-2, STH315N10F7-6, STH320N4F6-2, STH320N4F6-6, STH360N4F6-2, IRFP064N, STH400N4F6-2, STH400N4F6-6, STH7NA90FI, STH80N10F7-2, STH8NA80FI, IRHG567110, IRHG57110, IRHG597110

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