All MOSFET. STH400N4F6-2 Datasheet

 

STH400N4F6-2 Datasheet and Replacement


   Type Designator: STH400N4F6-2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 184 nS
   Cossⓘ - Output Capacitance: 1990 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00115 Ohm
   Package: H2PAK-2
 

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STH400N4F6-2 Datasheet (PDF)

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STH400N4F6-2

STH400N4F6-2, STH400N4F6-6Automotive-grade N-channel 40 V, 0.85 m typ.,180 A STripFET VI DeepGATE Power MOSFETsDatasheet - production dataFeatures Order codes VDS RDS(on) max IDTAB TABSTH400N4F6-240 V 1.15 m 180 ASTH400N4F6-6723 Designed for automotive applications and 11AEC-Q101 qualifiedH2PAK-2 Low gate chargeH2PAK-6 Very low on-res

Datasheet: STH310N10F7-2 , STH310N10F7-6 , STH315N10F7-2 , STH315N10F7-6 , STH320N4F6-2 , STH320N4F6-6 , STH360N4F6-2 , STH3N150-2 , IRFP064N , STH400N4F6-6 , STH7NA90FI , STH80N10F7-2 , STH8NA80FI , IRHG567110 , IRHG57110 , IRHG597110 , IRHG6110 .

History: PSMN7R0-100BS | 7N90AF | KI2310DS | IRF5850 | SDF04N40 | IXCY01N90E | IPD60R3K4CE

Keywords - STH400N4F6-2 MOSFET datasheet

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