All MOSFET. STH400N4F6-6 Datasheet

 

STH400N4F6-6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STH400N4F6-6
   Marking Code: 400N4F6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 404 nC
   trⓘ - Rise Time: 184 nS
   Cossⓘ - Output Capacitance: 1990 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00115 Ohm
   Package: H2PAK-6

 STH400N4F6-6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STH400N4F6-6 Datasheet (PDF)

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 sth400n4f6-2 sth400n4f6-6.pdf

STH400N4F6-6 STH400N4F6-6

STH400N4F6-2, STH400N4F6-6Automotive-grade N-channel 40 V, 0.85 m typ.,180 A STripFET VI DeepGATE Power MOSFETsDatasheet - production dataFeatures Order codes VDS RDS(on) max IDTAB TABSTH400N4F6-240 V 1.15 m 180 ASTH400N4F6-6723 Designed for automotive applications and 11AEC-Q101 qualifiedH2PAK-2 Low gate chargeH2PAK-6 Very low on-res

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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