All MOSFET. STH400N4F6-6 Datasheet

 

STH400N4F6-6 Datasheet and Replacement


   Type Designator: STH400N4F6-6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 184 nS
   Cossⓘ - Output Capacitance: 1990 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00115 Ohm
   Package: H2PAK-6
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STH400N4F6-6 Datasheet (PDF)

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STH400N4F6-6

STH400N4F6-2, STH400N4F6-6Automotive-grade N-channel 40 V, 0.85 m typ.,180 A STripFET VI DeepGATE Power MOSFETsDatasheet - production dataFeatures Order codes VDS RDS(on) max IDTAB TABSTH400N4F6-240 V 1.15 m 180 ASTH400N4F6-6723 Designed for automotive applications and 11AEC-Q101 qualifiedH2PAK-2 Low gate chargeH2PAK-6 Very low on-res

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SQM50P08-25L | IRLR024 | AON6794 | MC08N005C | UPA2701GR | CED05N8 | BL10N70-A

Keywords - STH400N4F6-6 MOSFET datasheet

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