STH400N4F6-6 Datasheet. Specs and Replacement

Type Designator: STH400N4F6-6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 184 nS

Cossⓘ - Output Capacitance: 1990 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00115 Ohm

Package: H2PAK-6

STH400N4F6-6 substitution

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STH400N4F6-6 datasheet

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STH400N4F6-6

STH400N4F6-2, STH400N4F6-6 Automotive-grade N-channel 40 V, 0.85 m typ.,180 A STripFET VI DeepGATE Power MOSFETs Datasheet - production data Features Order codes VDS RDS(on) max ID TAB TAB STH400N4F6-2 40 V 1.15 m 180 A STH400N4F6-6 7 2 3 Designed for automotive applications and 1 1 AEC-Q101 qualified H2PAK-2 Low gate charge H2PAK-6 Very low on-res... See More ⇒

Detailed specifications: STH310N10F7-6, STH315N10F7-2, STH315N10F7-6, STH320N4F6-2, STH320N4F6-6, STH360N4F6-2, STH3N150-2, STH400N4F6-2, IRF730, STH7NA90FI, STH80N10F7-2, STH8NA80FI, IRHG567110, IRHG57110, IRHG597110, IRHG6110, IRHG7110

Keywords - STH400N4F6-6 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.