STH80N10F7-2 Datasheet and Replacement
Type Designator: STH80N10F7-2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 700 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: H2PAK-2
STH80N10F7-2 substitution
STH80N10F7-2 Datasheet (PDF)
std80n10f7 stf80n10f7 sth80n10f7-2 stp80n10f7.pdf

STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7N-channel 100 V, 0.008 typ., 80 A STripFET VII DeepGATE Power MOSFETs in DPAK, TO-220FP, H2PAK-2 and TO-220Datasheet - production dataFeaturesTABVDS @ RDS(on) 3Order codes ID PTOTTJmax max1DPAK 3STD80N10F7 0.01 70 A 85 W21TO-220FP STF80N10F7 0.01 40 A 30 W100 VTABTAB STH80N10F7-2 0.0095 80 A
sth80n10lf7-2ag.pdf

STH80N10LF7-2AGDatasheetAutomotive-grade N-channel 100 V, 7 m typ., 80 A, STripFET F7 Power MOSFET in an H2PAK-2 packageFeaturesTABVDS RDS(on) max. ID PTOTOrder codeSTH80N10LF7-2AG 100 V 10 m 80 A 110 W231 AEC-Q101 qualified Among the lowest RDS(on) on the marketH2PAK-2 Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunityD(TA
sth80n10lf7.pdf

isc N-Channel MOSFET Transistor STH80N10LF7FEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
Datasheet: STH315N10F7-6 , STH320N4F6-2 , STH320N4F6-6 , STH360N4F6-2 , STH3N150-2 , STH400N4F6-2 , STH400N4F6-6 , STH7NA90FI , IRF3205 , STH8NA80FI , IRHG567110 , IRHG57110 , IRHG597110 , IRHG6110 , IRHG7110 , IRHG9110 , IRHI7360SE .
Keywords - STH80N10F7-2 MOSFET datasheet
STH80N10F7-2 cross reference
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STH80N10F7-2 substitution
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