STH80N10F7-2 Datasheet. Specs and Replacement

Type Designator: STH80N10F7-2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: H2PAK-2

STH80N10F7-2 substitution

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STH80N10F7-2 datasheet

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STH80N10F7-2

STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 N-channel 100 V, 0.008 typ., 80 A STripFET VII DeepGATE Power MOSFETs in DPAK, TO-220FP, H2PAK-2 and TO-220 Datasheet - production data Features TAB VDS @ RDS(on) 3 Order codes ID PTOT TJmax max 1 DPAK 3 STD80N10F7 0.01 70 A 85 W 2 1 TO-220FP STF80N10F7 0.01 40 A 30 W 100 V TAB TAB STH80N10F7-2 0.0095 80 A... See More ⇒

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STH80N10F7-2

STH80N10LF7-2AG Datasheet Automotive-grade N-channel 100 V, 7 m typ., 80 A, STripFET F7 Power MOSFET in an H2PAK-2 package Features TAB VDS RDS(on) max. ID PTOT Order code STH80N10LF7-2AG 100 V 10 m 80 A 110 W 2 3 1 AEC-Q101 qualified Among the lowest RDS(on) on the market H2PAK-2 Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity D(TA... See More ⇒

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STH80N10F7-2

isc N-Channel MOSFET Transistor STH80N10LF7 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒

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STH80N10F7-2

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Detailed specifications: STH315N10F7-6, STH320N4F6-2, STH320N4F6-6, STH360N4F6-2, STH3N150-2, STH400N4F6-2, STH400N4F6-6, STH7NA90FI, IRF3205, STH8NA80FI, IRHG567110, IRHG57110, IRHG597110, IRHG6110, IRHG7110, IRHG9110, IRHI7360SE

Keywords - STH80N10F7-2 MOSFET specs

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