STH8NA80FI Datasheet. Specs and Replacement

Type Designator: STH8NA80FI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 188 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: ISOWATT218

STH8NA80FI substitution

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STH8NA80FI datasheet

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STH8NA80FI

STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 - 8 A TO-247/ISOWATT218 PowerMesh MOSFET TYPE VDSS RDS(on) ID STW8NB90 900 V ... See More ⇒

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Detailed specifications: STH320N4F6-2, STH320N4F6-6, STH360N4F6-2, STH3N150-2, STH400N4F6-2, STH400N4F6-6, STH7NA90FI, STH80N10F7-2, IRF740, IRHG567110, IRHG57110, IRHG597110, IRHG6110, IRHG7110, IRHG9110, IRHI7360SE, IRHI7460SE

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