IRHG6110 Datasheet. Specs and Replacement

Type Designator: IRHG6110

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: MO-036AB

IRHG6110 substitution

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IRHG6110 datasheet

 ..1. Size:191K  international rectifier
 irhg6110.pdf pdf_icon

IRHG6110

PD - 93783E IRHG6110 100V, Combination 2N-2P-CHANNEL RADIATION HARDENED RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level RDS(on) ID CHANNEL IRHG6110 100K Rads (Si) 0.6 1.0A N IRHG63110 300K Rads (Si) 0.6 1.0A N IRHG6110 100K Rads (Si) 1.1 -0.75A P IRHG63110 300K Rads (Si) 1.1 -0.75A P MO-036A... See More ⇒

Detailed specifications: STH400N4F6-2, STH400N4F6-6, STH7NA90FI, STH80N10F7-2, STH8NA80FI, IRHG567110, IRHG57110, IRHG597110, IRF540, IRHG7110, IRHG9110, IRHI7360SE, IRHI7460SE, IRHLF770Z4, IRHLF7970Z4, IRHLF87Y20, IRHLG7670Z4

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