All MOSFET. IRHG6110 Datasheet

 

IRHG6110 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRHG6110
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: MO-036AB

 IRHG6110 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRHG6110 Datasheet (PDF)

 ..1. Size:191K  international rectifier
 irhg6110.pdf

IRHG6110 IRHG6110

PD - 93783EIRHG6110100V, Combination 2N-2P-CHANNEL RADIATION HARDENEDRAD-Hard HEXFET POWER MOSFETMOSFET TECHNOLOGY THRU-HOLE (MO-036AB)Product Summary Part Number Radiation Level RDS(on) ID CHANNEL IRHG6110 100K Rads (Si) 0.6 1.0A N IRHG63110 300K Rads (Si) 0.6 1.0A N IRHG6110 100K Rads (Si) 1.1 -0.75A P IRHG63110 300K Rads (Si) 1.1 -0.75A PMO-036A

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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