All MOSFET. IRHG7110 Datasheet

 

IRHG7110 Datasheet and Replacement


   Type Designator: IRHG7110
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: MO-036AB
 

 IRHG7110 substitution

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IRHG7110 Datasheet (PDF)

 ..1. Size:119K  international rectifier
 irhg7110.pdf pdf_icon

IRHG7110

PD - 90670CIRHG7110100V, QUAD N-CHANNEL RADIATION HARDENEDRAD-Hard HEXFET POWER MOSFETMOSFET TECHNOLOGY THRU-HOLE (MO-036AB)Product Summary Part Number Radiation Level RDS(on) ID IRHG7110 100K Rads (Si) 0.6 1.0A IRHG3110 300K Rads (Si) 0.6 1.0A IRHG4110 600K Rads (Si) 0.6 1.0A IRHG8110 1000K Rads (Si) 0.6 1.0AMO-036ABInternational Rectifiers R

 9.1. Size:243K  international rectifier
 irhg7214.pdf pdf_icon

IRHG7110

PD - 91711BRADIATION HARDENED IRHG7214RADIATION HARDENED IRHG7214RADIATION HARDENED IRHG7214RADIATION HARDENED IRHG7214RADIATION HARDENED IRHG7214POWER MOSFET 250V,QUAD N-CHANNELPOWER MOSFET 250V,QUAD N-CHANNELPOWER MOSFET 250V,QUAD N-CHANNELPOWER MOSFET 250V,QUAD N-CHANNELPOWER MOSFET 250V,QUAD N-CHANNEL RAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TECHNOLOGYRAD Ha

Datasheet: STH400N4F6-6 , STH7NA90FI , STH80N10F7-2 , STH8NA80FI , IRHG567110 , IRHG57110 , IRHG597110 , IRHG6110 , 50N06 , IRHG9110 , IRHI7360SE , IRHI7460SE , IRHLF770Z4 , IRHLF7970Z4 , IRHLF87Y20 , IRHLG7670Z4 , IRHLG770Z4 .

History: 2SK3642-ZK

Keywords - IRHG7110 MOSFET datasheet

 IRHG7110 cross reference
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