IRHG7110 Datasheet. Specs and Replacement

Type Designator: IRHG7110

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: MO-036AB

IRHG7110 substitution

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IRHG7110 datasheet

 ..1. Size:119K  international rectifier
 irhg7110.pdf pdf_icon

IRHG7110

PD - 90670C IRHG7110 100V, QUAD N-CHANNEL RADIATION HARDENED RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level RDS(on) ID IRHG7110 100K Rads (Si) 0.6 1.0A IRHG3110 300K Rads (Si) 0.6 1.0A IRHG4110 600K Rads (Si) 0.6 1.0A IRHG8110 1000K Rads (Si) 0.6 1.0A MO-036AB International Rectifier s R... See More ⇒

 9.1. Size:243K  international rectifier
 irhg7214.pdf pdf_icon

IRHG7110

PD - 91711B RADIATION HARDENED IRHG7214 RADIATION HARDENED IRHG7214 RADIATION HARDENED IRHG7214 RADIATION HARDENED IRHG7214 RADIATION HARDENED IRHG7214 POWER MOSFET 250V,QUAD N-CHANNEL POWER MOSFET 250V,QUAD N-CHANNEL POWER MOSFET 250V,QUAD N-CHANNEL POWER MOSFET 250V,QUAD N-CHANNEL POWER MOSFET 250V,QUAD N-CHANNEL RAD Hard HEXFET TECHNOLOGY RAD Hard HEXFET TECHNOLOGY RAD Ha... See More ⇒

Detailed specifications: STH400N4F6-6, STH7NA90FI, STH80N10F7-2, STH8NA80FI, IRHG567110, IRHG57110, IRHG597110, IRHG6110, 50N06, IRHG9110, IRHI7360SE, IRHI7460SE, IRHLF770Z4, IRHLF7970Z4, IRHLF87Y20, IRHLG7670Z4, IRHLG770Z4

Keywords - IRHG7110 MOSFET specs

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