All MOSFET. IRHG9110 Datasheet

 

IRHG9110 Datasheet and Replacement


   Type Designator: IRHG9110
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: MO-036AB
 

 IRHG9110 substitution

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IRHG9110 Datasheet (PDF)

 ..1. Size:176K  international rectifier
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IRHG9110

PD-93819CIRHG9110100V, QUAD P-CHANNEL RADIATION HARDENEDRAD-Hard HEXFET POWER MOSFETMOSFET TECHNOLOGY THRU-HOLE (MO-036AB)Product Summary Part Number Radiation Level RDS(on) ID IRHG9110 100K Rads (Si) 1.1 -0.75A IRHG93110 300K Rads (Si) 1.1 -0.75AMO-036ABInternational Rectifiers RAD-HardTM HEXFET MOSFETTechnology provides high performance power MOSF

Datasheet: STH7NA90FI , STH80N10F7-2 , STH8NA80FI , IRHG567110 , IRHG57110 , IRHG597110 , IRHG6110 , IRHG7110 , IRFP460 , IRHI7360SE , IRHI7460SE , IRHLF770Z4 , IRHLF7970Z4 , IRHLF87Y20 , IRHLG7670Z4 , IRHLG770Z4 , IRHLG77110 .

Keywords - IRHG9110 MOSFET datasheet

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