IRHG9110 Datasheet. Specs and Replacement

Type Designator: IRHG9110

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: MO-036AB

IRHG9110 substitution

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IRHG9110 datasheet

 ..1. Size:176K  international rectifier
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IRHG9110

PD-93819C IRHG9110 100V, QUAD P-CHANNEL RADIATION HARDENED RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level RDS(on) ID IRHG9110 100K Rads (Si) 1.1 -0.75A IRHG93110 300K Rads (Si) 1.1 -0.75A MO-036AB International Rectifier s RAD-HardTM HEXFET MOSFET Technology provides high performance power MOSF... See More ⇒

Detailed specifications: STH7NA90FI, STH80N10F7-2, STH8NA80FI, IRHG567110, IRHG57110, IRHG597110, IRHG6110, IRHG7110, IRFP460, IRHI7360SE, IRHI7460SE, IRHLF770Z4, IRHLF7970Z4, IRHLF87Y20, IRHLG7670Z4, IRHLG770Z4, IRHLG77110

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.