IRHI7360SE Datasheet. Specs and Replacement

Type Designator: IRHI7360SE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO-259AA

IRHI7360SE substitution

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IRHI7360SE datasheet

 ..1. Size:32K  international rectifier
 irhi7360se.pdf pdf_icon

IRHI7360SE

Provisional Data Sheet No. PD-9.1446A REPETITIVE AVALANCHE AND dv/dt RATED IRHI7360SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD Product Summary 400 Volt, 0.20 , (SEE) RAD HARD HEXFET Part Number BVDSS RDS(on) ID International Rectifier s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE fail- IRHI7360SE 400V 0.20 2... See More ⇒

 9.1. Size:32K  international rectifier
 irhi7460se.pdf pdf_icon

IRHI7360SE

Provisional Data Sheet No. PD-9.1224A REPETITIVE AVALANCHE AND dv/dt RATED IRHI7460SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD Product Summary 500 Volt, 0.32 , (SEE) RAD HARD HEXFET Part Number BVDSS RDS(on) ID International Rectifier s (SEE) RAD HARD technol- ogy HEXFETs demonstrate virtual immunity to SEE IRHI7460SE 500V 0.32 20A ... See More ⇒

Detailed specifications: STH80N10F7-2, STH8NA80FI, IRHG567110, IRHG57110, IRHG597110, IRHG6110, IRHG7110, IRHG9110, IRFZ44, IRHI7460SE, IRHLF770Z4, IRHLF7970Z4, IRHLF87Y20, IRHLG7670Z4, IRHLG770Z4, IRHLG77110, IRHLG77214

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