All MOSFET. IRHI7360SE Datasheet

 

IRHI7360SE Datasheet and Replacement


   Type Designator: IRHI7360SE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO-259AA
 

 IRHI7360SE substitution

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IRHI7360SE Datasheet (PDF)

 ..1. Size:32K  international rectifier
 irhi7360se.pdf pdf_icon

IRHI7360SE

Provisional Data Sheet No. PD-9.1446AREPETITIVE AVALANCHE AND dv/dt RATEDIRHI7360SEHEXFET TRANSISTORN-CHANNELSINGLE EVENT EFFECT (SEE) RAD HARDProduct Summary 400 Volt, 0.20, (SEE) RAD HARD HEXFETPart Number BVDSS RDS(on) IDInternational Rectifiers (SEE) RAD HARD technologyHEXFETs demonstrate virtual immunity to SEE fail- IRHI7360SE 400V 0.20 2

 9.1. Size:32K  international rectifier
 irhi7460se.pdf pdf_icon

IRHI7360SE

Provisional Data Sheet No. PD-9.1224AREPETITIVE AVALANCHE AND dv/dt RATEDIRHI7460SEHEXFET TRANSISTORN-CHANNELSINGLE EVENT EFFECT (SEE) RAD HARDProduct Summary 500 Volt, 0.32, (SEE) RAD HARD HEXFETPart Number BVDSS RDS(on) IDInternational Rectifiers (SEE) RAD HARD technol-ogy HEXFETs demonstrate virtual immunity to SEEIRHI7460SE 500V 0.32 20A

Datasheet: STH80N10F7-2 , STH8NA80FI , IRHG567110 , IRHG57110 , IRHG597110 , IRHG6110 , IRHG7110 , IRHG9110 , IRFZ44 , IRHI7460SE , IRHLF770Z4 , IRHLF7970Z4 , IRHLF87Y20 , IRHLG7670Z4 , IRHLG770Z4 , IRHLG77110 , IRHLG77214 .

History: WML099N10HGS | IRLI3705NPBF

Keywords - IRHI7360SE MOSFET datasheet

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