IXFR24N50Q Datasheet. Specs and Replacement

Type Designator: IXFR24N50Q  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: TO247

  📄📄 Copy 

IXFR24N50Q substitution

- MOSFET ⓘ Cross-Reference Search

 

IXFR24N50Q datasheet

 ..1. Size:78K  ixys
 ixfr24n50q ixfr26n50q.pdf pdf_icon

IXFR24N50Q

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 26N50Q 500 V 24 A 0.20 ISOPLUS247TM IXFR 24N50Q 500 V 22 A 0.23 (Electrically Isolated Back Surface) trr 250 ns N-Channel Enhancement Mode High dV/dt, Low t , HDMOSTM Family rr Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C... See More ⇒

 5.1. Size:33K  ixys
 ixfr24n50 ixfr26n50.pdf pdf_icon

IXFR24N50Q

Advanced Technical Information VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 26N50 500 V 24 A 0.20 W ISOPLUS247TM IXFR 24N50 500 V 22 A 0.23 W (Electrically Isolated Back Surface) trr 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 50... See More ⇒

 7.1. Size:94K  ixys
 ixfr24n80p.pdf pdf_icon

IXFR24N50Q

IXFR 24N80P VDSS = 800 V PolarHVTM HiPerFET ID25 = 13 A Power MOSFET RDS(on) 420 m (Electrically Isolated Back Surface) trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RG... See More ⇒

 7.2. Size:112K  ixys
 ixfr24n100.pdf pdf_icon

IXFR24N50Q

HiPerFETTM Power VDSS = 1000V IXFR24N100 ID25 = 22A MOSFET RDS(on) 390m ISOPLUS247TM t 250ns (Electrically Isolated Back Surface) rr N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Co... See More ⇒

SHOW MORE

Detailed specifications: IXFR120N20, IXFR12N100Q, IXFR15N80Q, IXFR180N07, IXFR180N085, IXFR180N10, IXFR24N100, IXFR24N50, IRFB4115, IXFR26N50, IXFR26N50Q, IXFR30N50Q, IXFR32N50Q, IXFR50N50, IXFR55N50, IXFR58N20Q, IXFR80N20Q

Keywords - IXFR24N50Q MOSFET specs

 IXFR24N50Q cross reference

 IXFR24N50Q equivalent finder

 IXFR24N50Q pdf lookup

 IXFR24N50Q substitution

 IXFR24N50Q replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs