IRHLG770Z4
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRHLG770Z4
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 1.07
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 2.5
nC
trⓘ - Rise Time: 2.4
nS
Cossⓘ -
Output Capacitance: 39
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6
Ohm
Package: MO-036AB
IRHLG770Z4
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRHLG770Z4
Datasheet (PDF)
..1. Size:207K international rectifier
irhlg770z4.pdf 
PRELIMINARYPD-95865B2N7618M1RADIATION HARDENED IRHLG770Z4LOGIC LEVEL POWER MOSFET 60V, Quad N-CHANNELTECHNOLOGYTHRU-HOLE (MO-036AB)Product Summary Part Number Radiation Level RDS(on) ID IRHLG770Z4 100K Rads (Si) 0.6 1.07A IRHLG730Z4 300K Rads (Si) 0.6 1.07AMO-036ABInternational Rectifiers R7TM Logic Level Power Features:MOSFETs provide simple solution to
7.1. Size:202K international rectifier
irhlg77214.pdf
PD-973392N7614M1RADIATION HARDENED IRHLG77214LOGIC LEVEL POWER MOSFET 250V, Quad N-CHANNELTECHNOLOGYTHRU-HOLE (MO-036AB)Product Summary Part Number Radiation Level RDS(on) ID IRHLG77214 100K Rads (Si) 1.1 0.8A IRHLG73214 300K Rads (Si) 1.1 0.8AMO-036ABInternational Rectifiers R7TM Logic Level Power MOSFETsprovide simple solution to interfacing CMOS and TTL
7.2. Size:206K international rectifier
irhlg77110.pdf
PRELIMINARYPD-971782N7612M1RADIATION HARDENED IRHLG77110LOGIC LEVEL POWER MOSFET 100V, Quad N-CHANNELTECHNOLOGYTHRU-HOLE (MO-036AB)Product Summary Part Number Radiation Level RDS(on) ID IRHLG77110 100K Rads (Si) 0.22 1.8A IRHLG73110 300K Rads (Si) 0.22 1.8AMO-036ABInternational Rectifiers R7TM Logic Level Power Features:MOSFETs provide simple solution to
8.1. Size:213K international rectifier
irhlg7970z4.pdf
PRELIMINARYPD-97200B2N7628M1RADIATION HARDENED IRHLG7970Z4LOGIC LEVEL POWER MOSFET 60V, Quad P-CHANNELTHRU-HOLE (MO-036AB) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHLG7970Z4 100K Rads (Si) 1.25 -0.71A IRHLG7930Z4 300K Rads (Si) 1.25 -0.71AMO-036ABInternational Rectifiers R7TM Logic Level PowerFeatures:MOSFETs provide simple solut
8.2. Size:300K international rectifier
irhlg7670z4.pdf
PRELIMINARYPD-97191B 2N7635M1IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENEDTECHNOLOGY LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB)Product SummaryPart Number Radiation Level RDS(on) ID CHANNEL 0.6 1.07A N IRHLG7670Z4 100K Rads (Si)1.25 -0.71A P 0.6 1.07A N IRHLG7630Z4 300K Rads (Si)1.25 -0.71A PMO-036ABInternational Rectifier
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