IRHNA597160
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRHNA597160
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 250
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 47
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 170
nC
trⓘ - Rise Time: 100
nS
Cossⓘ -
Output Capacitance: 1570
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.049
Ohm
Package: SMD-2
IRHNA597160
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRHNA597160
Datasheet (PDF)
..1. Size:180K international rectifier
irhna597160.pdf 
PD-94493C IRHNA597160RADIATION HARDENED JANSR2N7550U2POWER MOSFET 100V, P-CHANNELREF: MIL-PRF-19500/713SURFACE MOUNT (SMD-2)TECHNOLOGY55 Product SummaryPart Number Radiation Level Rds(on) ID QPL Part NumberIRHNA597160 100K Rads (Si) 0.049 -47A JANSR2N7550U2IRHNA593160 300K Rads (Si) 0.049 -47A JANSF2N7550U2SMD-2International Rectifiers R5TM technolo
6.1. Size:119K international rectifier
irhna597260.pdf
PD - 94168ARADIATION HARDENED IRHNA597260POWER MOSFET200V, P-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHNA597260 100K Rads (Si) 0.102 -35.5A IRHNA593260 300K Rads (Si) 0.102 -35.5ASMD-2International Rectifiers R5TM technology providesFeatures:high performance power MOSFETs for space appli- Sin
8.1. Size:105K international rectifier
irhna57z60.pdf
PD - 91787ERADIATION HARDENED IRHNA57Z60POWER MOSFET30V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGY44#cProduct Summary Part Number Radiation Level RDS(on) ID IRHNA57Z60 100K Rads (Si) 0.0035 75*A IRHNA53Z60 300K Rads (Si) 0.0035 75*A IRHNA54Z60 600K Rads (Si) 0.0035 75*A IRHNA58Z60 1000K Rads (Si) 0.0040 75*ASMD-2International Rectifiers R5TM technolo
8.2. Size:106K international rectifier
irhna57260.pdf
PD - 91838ERADIATION HARDENED IRHNA57260POWER MOSFET200V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGY44 #cProduct Summary Part Number Radiation Level RDS(on) ID IRHNA57260 100K Rads (Si) 0.043 55A IRHNA53260 300K Rads (Si) 0.043 55A IRHNA54260 600K Rads (Si) 0.043 55A IRHNA58260 1000K Rads (Si) 0.048 55ASMD-2International Rectifiers R5TM technology
8.3. Size:132K international rectifier
irhna57160.pdf
PD - 91860FRADIATION HARDENED IRHNA57160POWER MOSFET100V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHNA57160 100K Rads (Si) 0.012 75*A IRHNA53160 300K Rads (Si) 0.012 75*A IRHNA54160 600K Rads (Si) 0.012 75*A IRHNA58160 1000K Rads (Si) 0.013 75*ASMD-2International Rectifiers R5TM technol
8.4. Size:122K international rectifier
irhna57260se.pdf
PD - 91839FRADIATION HARDENED IRHNA57260SEPOWER MOSFET200V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHNA57260SE 100K Rads (Si) 0.038 55ASMD-2International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-Features:cations. These devices have been characterized for
8.5. Size:98K international rectifier
irhna57064.pdf
PD - 91852REPETITIVE AVALANCHE AND dv/dt RATED IRHNA57064MOSFET TRANSISTOR IRHNA58064N - CHANNELMEGA RAD HARD Product Summary60Volt, 0.0056, MEGA RAD HARD MOSFETInternational Rectifiers RAD HARD technology Part Number BVDSS RDS(on) IDMOSFETs demonstrate immunity to SEE failure. Ad-IRHNA57064 60V 0.0056 75*Aditionally, under identical pre- and p
8.6. Size:147K international rectifier
irhna57163se.pdf
PD - 93856ARADIATION HARDENED IRHNA57163SEPOWER MOSFET130V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGY44# ccProduct Summary Part Number Radiation Level RDS(on) ID IRHNA57163SE 100K Rads (Si) 0.0135 75A*SMD-2International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-Features:cations. These devices have been characterize
8.7. Size:145K international rectifier
irhna57264se.pdf
PD - 93816BRADIATION HARDENED IRHNA57264SEPOWER MOSFET250V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGY44# ccProduct Summary Part Number Radiation Level RDS(on) ID IRHNA57264SE 100K Rads (Si) 0.06 49ASMD-2International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-Features:cations. These devices have been characterized f
Datasheet: FMM50-025TF
, FMM60-02TF
, FMM75-01F
, FMP26-02P
, FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, RFP50N06
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, GMM3x180-004X2-SMD
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
.
