IRHNA597160 datasheet, подбор замены

 ..1. Size:180K  international rectifier
 irhna597160.pdf 

PD-94493C IRHNA597160 RADIATION HARDENED JANSR2N7550U2 POWER MOSFET 100V, P-CHANNEL REF MIL-PRF-19500/713 SURFACE MOUNT (SMD-2) TECHNOLOGY 5 5 Product Summary Part Number Radiation Level Rds(on) ID QPL Part Number IRHNA597160 100K Rads (Si) 0.049 -47A JANSR2N7550U2 IRHNA593160 300K Rads (Si) 0.049 -47A JANSF2N7550U2 SMD-2 International Rectifier s R5TM technolo

 6.1. Size:119K  international rectifier
 irhna597260.pdf 

PD - 94168A RADIATION HARDENED IRHNA597260 POWER MOSFET 200V, P-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNA597260 100K Rads (Si) 0.102 -35.5A IRHNA593260 300K Rads (Si) 0.102 -35.5A SMD-2 International Rectifier s R5TM technology provides Features high performance power MOSFETs for space appli- Sin

 8.1. Size:105K  international rectifier
 irhna57z60.pdf 

PD - 91787E RADIATION HARDENED IRHNA57Z60 POWER MOSFET 30V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNA57Z60 100K Rads (Si) 0.0035 75*A IRHNA53Z60 300K Rads (Si) 0.0035 75*A IRHNA54Z60 600K Rads (Si) 0.0035 75*A IRHNA58Z60 1000K Rads (Si) 0.0040 75*A SMD-2 International Rectifier s R5TM technolo

 8.2. Size:106K  international rectifier
 irhna57260.pdf 

PD - 91838E RADIATION HARDENED IRHNA57260 POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY 4 4 # c Product Summary Part Number Radiation Level RDS(on) ID IRHNA57260 100K Rads (Si) 0.043 55A IRHNA53260 300K Rads (Si) 0.043 55A IRHNA54260 600K Rads (Si) 0.043 55A IRHNA58260 1000K Rads (Si) 0.048 55A SMD-2 International Rectifier s R5TM technology

 8.3. Size:132K  international rectifier
 irhna57160.pdf 

PD - 91860F RADIATION HARDENED IRHNA57160 POWER MOSFET 100V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNA57160 100K Rads (Si) 0.012 75*A IRHNA53160 300K Rads (Si) 0.012 75*A IRHNA54160 600K Rads (Si) 0.012 75*A IRHNA58160 1000K Rads (Si) 0.013 75*A SMD-2 International Rectifier s R5TM technol

 8.4. Size:122K  international rectifier
 irhna57260se.pdf 

PD - 91839F RADIATION HARDENED IRHNA57260SE POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNA57260SE 100K Rads (Si) 0.038 55A SMD-2 International Rectifier s R5TM technology provides high performance power MOSFETs for space appli- Features cations. These devices have been characterized for

 8.5. Size:98K  international rectifier
 irhna57064.pdf 

PD - 91852 REPETITIVE AVALANCHE AND dv/dt RATED IRHNA57064 MOSFET TRANSISTOR IRHNA58064 N - CHANNEL MEGA RAD HARD Product Summary 60Volt, 0.0056 , MEGA RAD HARD MOSFET International Rectifier s RAD HARD technology Part Number BVDSS RDS(on) ID MOSFETs demonstrate immunity to SEE failure. Ad- IRHNA57064 60V 0.0056 75*A ditionally, under identical pre- and p

 8.6. Size:147K  international rectifier
 irhna57163se.pdf 

PD - 93856A RADIATION HARDENED IRHNA57163SE POWER MOSFET 130V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY 4 4# c c Product Summary Part Number Radiation Level RDS(on) ID IRHNA57163SE 100K Rads (Si) 0.0135 75A* SMD-2 International Rectifier s R5TM technology provides high performance power MOSFETs for space appli- Features cations. These devices have been characterize

 8.7. Size:145K  international rectifier
 irhna57264se.pdf 

PD - 93816B RADIATION HARDENED IRHNA57264SE POWER MOSFET 250V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY 4 4# c c Product Summary Part Number Radiation Level RDS(on) ID IRHNA57264SE 100K Rads (Si) 0.06 49A SMD-2 International Rectifier s R5TM technology provides high performance power MOSFETs for space appli- Features cations. These devices have been characterized f