All MOSFET. IRHNM57214SE Datasheet

 

IRHNM57214SE Datasheet and Replacement


   Type Designator: IRHNM57214SE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 51 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
   Package: SMD-0.2
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IRHNM57214SE Datasheet (PDF)

 ..1. Size:182K  international rectifier
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IRHNM57214SE

PD-97818RADIATION HARDENED IRHNM57214SEPOWER MOSFET 250V, N-CHANNELSURFACE MOUNT (SMD-0.2)55 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNM57214SE 100K Rads (Si) 1.7 2.4A SMD-0.2 (METAL LID)International Rectifiers R5TM technology provides highFeatures:performance power MOSFETs for space applications. Thesen Single Event Effect (SEE

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: KHB9D0N50F2 | P1604ETF | SVS5N65FJHD2 | SM7320ESQG | 2SK2326 | SVS11N70MJD2 | IXFA80N25X3

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