IRHNM57214SE Datasheet. Specs and Replacement

Type Designator: IRHNM57214SE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 51 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm

Package: SMD-0.2

IRHNM57214SE substitution

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IRHNM57214SE datasheet

 ..1. Size:182K  international rectifier
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IRHNM57214SE

PD-97818 RADIATION HARDENED IRHNM57214SE POWER MOSFET 250V, N-CHANNEL SURFACE MOUNT (SMD-0.2) 5 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNM57214SE 100K Rads (Si) 1.7 2.4A SMD-0.2 (METAL LID) International Rectifier s R5TM technology provides high Features performance power MOSFETs for space applications. These n Single Event Effect (SEE... See More ⇒

Detailed specifications: IRHNA7360SE, IRHNA7460SE, IRHNA7Z60, IRHNB7264SE, IRHNJ57234SE, IRHNJ67434, IRHNJ67C30, IRHNJ9230, IRF1010E, IRHSLNA57064, IRHSLNA57Z60, IRHSNA57064, IRHSNA57Z60, IRF034, IRF044SMD, IRF054SMD, IRF100B201

Keywords - IRHNM57214SE MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.