All MOSFET. IRHNM57214SE Datasheet

 

IRHNM57214SE Datasheet and Replacement


   Type Designator: IRHNM57214SE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 51 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
   Package: SMD-0.2
 

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IRHNM57214SE Datasheet (PDF)

 ..1. Size:182K  international rectifier
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IRHNM57214SE

PD-97818RADIATION HARDENED IRHNM57214SEPOWER MOSFET 250V, N-CHANNELSURFACE MOUNT (SMD-0.2)55 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNM57214SE 100K Rads (Si) 1.7 2.4A SMD-0.2 (METAL LID)International Rectifiers R5TM technology provides highFeatures:performance power MOSFETs for space applications. Thesen Single Event Effect (SEE

Datasheet: IRHNA7360SE , IRHNA7460SE , IRHNA7Z60 , IRHNB7264SE , IRHNJ57234SE , IRHNJ67434 , IRHNJ67C30 , IRHNJ9230 , IRF530 , IRHSLNA57064 , IRHSLNA57Z60 , IRHSNA57064 , IRHSNA57Z60 , IRF034 , IRF044SMD , IRF054SMD , IRF100B201 .

History: FDD4685F085

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