All MOSFET. IRHSLNA57Z60 Datasheet

 

IRHSLNA57Z60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRHSLNA57Z60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 200 nC
   trⓘ - Rise Time: 160 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: SMD-2

 IRHSLNA57Z60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRHSLNA57Z60 Datasheet (PDF)

 ..1. Size:123K  international rectifier
 irhslna57z60.pdf

IRHSLNA57Z60 IRHSLNA57Z60

PD-94400BRAD-HARD IRHSLNA57Z60SYNCHRONOUS RECTIFIER30V, N-CHANNELSURFACE MOUNT (SMD-2)Product Summary Part Number Radiation Level RDS(on) QG IRHSLNA57Z60 100K Rads (Si) 4.0m 200nC IRHSLNA53Z60 300K Rads (Si) 4.0m 200nCIRHSLNA54Z60 600K Rads (Si) 4.0m 200nC IRHSLNA58Z60 1000K Rads (Si) 4.5m 200nCSMD-2Description:The SynchFet family of Co-Pack RAD-Hard MOSFET

 5.1. Size:112K  international rectifier
 irhslna57064.pdf

IRHSLNA57Z60 IRHSLNA57Z60

PD-94401ARAD-HARD IRHSLNA57064SYNCHRONOUS RECTIFIER60V, N-CHANNELSURFACE MOUNT (SMD-2)Product Summary Part Number Radiation Level RDS(on) QGIRHSLNA57064 100K Rads (Si) 6.1m 160nCIRHSLNA53064 300K Rads (Si) 6.1m 160nCIRHSLNA54064 600K Rads (Si) 6.1m 160nCIRHSLNA58064 1000K Rads (Si) 7.1m 160nCSMD-2Description:The SynchFet family of Co-Pack RAD-Hard MOSFETs

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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