IRHSNA57Z60 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRHSNA57Z60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 200 nC
   trⓘ - Rise Time: 160 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: SMD-2

IRHSNA57Z60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS