All MOSFET. IRHSNA57Z60 Datasheet

 

IRHSNA57Z60 Datasheet and Replacement


   Type Designator: IRHSNA57Z60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 200 nC
   tr ⓘ - Rise Time: 160 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: SMD-2
 

 IRHSNA57Z60 substitution

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IRHSNA57Z60 Datasheet (PDF)

 ..1. Size:111K  international rectifier
 irhsna57z60.pdf pdf_icon

IRHSNA57Z60

PD-94237FRAD-HARD IRHSNA57Z60SYNCHRONOUS RECTIFIER30V, N-CHANNELSURFACE MOUNT (SMD-2)Product Summary Part Number Radiation Level RDS(on) QG IRHSNA57Z60 100K Rads (Si) 3.5m 200nC IRHSNA53Z60 300K Rads (Si) 3.5m 200nC IRHSNA54Z60 600K Rads (Si) 3.5m 200nC IRHSNA58Z60 1000K Rads (Si) 4.0m 200nCSMD-2Description:The SynchFet family of Co-Pack RAD-Hard MOSFETsF

 6.1. Size:271K  international rectifier
 irhsna57064.pdf pdf_icon

IRHSNA57Z60

PD-94323DRAD-HARD IRHSNA57064SYNCHRONOUS RECTIFIER60V, N-CHANNELSURFACE MOUNT (SMD-2)Product Summary Part Number Radiation Level RDS(on) QG IRHSNA57064 100K Rads (Si) 6.5m 160nC IRHSNA53064 300K Rads (Si) 6.5m 160nC IRHSNA54064 600K Rads (Si) 6.5m 160nC IRHSNA58064 1000K Rads (Si) 6.5m 160nCSMD-2Description:The SynchFet family of Co-Pack RAD-Hard MOSFETsF

Datasheet: IRHNJ57234SE , IRHNJ67434 , IRHNJ67C30 , IRHNJ9230 , IRHNM57214SE , IRHSLNA57064 , IRHSLNA57Z60 , IRHSNA57064 , IRLB4132 , IRF034 , IRF044SMD , IRF054SMD , IRF100B201 , IRF100B202 , IRF100S201 , IRF1010A , IRF1010ELPBF .

Keywords - IRHSNA57Z60 MOSFET datasheet

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