All MOSFET. IRF054SMD Datasheet

 

IRF054SMD Datasheet and Replacement


   Type Designator: IRF054SMD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 180 nS
   Cossⓘ - Output Capacitance: 2000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: SMD1
 

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IRF054SMD Datasheet (PDF)

 ..1. Size:22K  semelab
 irf054smd.pdf pdf_icon

IRF054SMD

IRF054SMDSEMELABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 60V ID(cont) 45A RDS(on) 0.027FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS

 8.1. Size:146K  international rectifier
 irf054.pdf pdf_icon

IRF054SMD

PD - 90640REPETITIVE AVALANCHE AND dv/dt RATED IRF05460V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product SummaryPart Number BVDSS RDS(on) IDIRF054 60V 0.022 45A*The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design ac

Datasheet: IRHNJ9230 , IRHNM57214SE , IRHSLNA57064 , IRHSLNA57Z60 , IRHSNA57064 , IRHSNA57Z60 , IRF034 , IRF044SMD , 20N50 , IRF100B201 , IRF100B202 , IRF100S201 , IRF1010A , IRF1010ELPBF , IRF1010EPBF , IRF1010ESPBF , IRF1010EZLPBF .

History: G5N50K | HM15N50F | HFS5N50U

Keywords - IRF054SMD MOSFET datasheet

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