IRF1010EZSPBF PDF and Equivalents Search

 

IRF1010EZSPBF Specs and Replacement

Type Designator: IRF1010EZSPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 420 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO-263

IRF1010EZSPBF substitution

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IRF1010EZSPBF datasheet

 ..1. Size:407K  international rectifier
 irf1010ezpbf irf1010ezspbf irf1010ezlpbf.pdf pdf_icon

IRF1010EZSPBF

PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 8.5m Lead-Free G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing tech... See More ⇒

 ..2. Size:407K  international rectifier
 irf1010ezlpbf irf1010ezpbf irf1010ezspbf.pdf pdf_icon

IRF1010EZSPBF

PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 8.5m Lead-Free G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing tech... See More ⇒

 4.1. Size:375K  international rectifier
 auirf1010ezstrl.pdf pdf_icon

IRF1010EZSPBF

PD - 95962 AUTOMOTIVE GRADE AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 60V 175 C Operating Temperature Fast Switching RDS(on) max. 8.5m Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 84A Lead-Free, RoHS Compliant S Automotive Qualified * ID (Package Limited)... See More ⇒

 4.2. Size:756K  infineon
 auirf1010ez auirf1010ezs auirf1010ezl.pdf pdf_icon

IRF1010EZSPBF

AUIRF1010EZ AUIRF1010EZS AUTOMOTIVE GRADE AUIRF1010EZL Features VDSS 60V Advanced Process Technology RDS(on) typ. 6.8m Ultra Low On-Resistance max. 8.5m 175 C Operating Temperature ID (Silicon Limited) 84A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive Q... See More ⇒

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Detailed specifications: IRF100B202 , IRF100S201 , IRF1010A , IRF1010ELPBF , IRF1010EPBF , IRF1010ESPBF , IRF1010EZLPBF , IRF1010EZPBF , 5N60 , IRF1010H , IRF1010NLPBF , IRF1010NPBF , IRF1010NSPBF , IRF1010ZLPBF , IRF1010ZPBF , IRF1010ZSPBF , IRF1018EPBF .

Keywords - IRF1010EZSPBF MOSFET specs

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