All MOSFET. IXFR55N50 Datasheet

 

IXFR55N50 Datasheet and Replacement


   Type Designator: IXFR55N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 48 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 1280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO247
 

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IXFR55N50 Datasheet (PDF)

 ..1. Size:75K  ixys
 ixfr50n50 ixfr55n50.pdf pdf_icon

IXFR55N50

VDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 50N50 500 V 43 A 100 mISOPLUS247TMIXFR 55N50 500 V 48 A 90 m(Electrically Isolated Back Surface) trr 250 ns Single Die MOSFETSymbol Test Conditions Maximum Ratings ISOPLUS 247TMVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VGVGS

 9.1. Size:89K  ixys
 ixfr58n20q.pdf pdf_icon

IXFR55N50

IXFR 58N20Q V = 200 VHiPerFETTM Power MOSFETsDSSID25 = 50 AISOPLUS247TM Q-ClassRDS(on) = 40 m(Electrically Isolated Back Surface) trr 200 ns N-Channel Enhancement ModeAvalanche Rated, High dV/dtLow Gate Charge and CapacitancesPreliminary Data SheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TME153432VDSS TJ = 25C

Datasheet: IXFR24N100 , IXFR24N50 , IXFR24N50Q , IXFR26N50 , IXFR26N50Q , IXFR30N50Q , IXFR32N50Q , IXFR50N50 , 7N65 , IXFR58N20Q , IXFR80N20Q , IXFT10N100 , IXFT12N100 , IXFT12N100Q , IXFT13N80Q , IXFT14N100 , IXFT15N100 .

History: JMTP3010D

Keywords - IXFR55N50 MOSFET datasheet

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