IRF121 Datasheet. Specs and Replacement
Type Designator: IRF121
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO3
IRF121 substitution
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IRF121 datasheet
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PD - 93803 PROVISIONAL IRF1205 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 55V 175 C Operating Temprature Fast Switching RDS(on) = 0.027 Fully Avalanche Rated G ID = 41A S Description Fifth Generation MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area... See More ⇒
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SMIRF12N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75 (VGS=10V, ID=6A) on-state resistance, provide superior... See More ⇒
Detailed specifications: IRF1010ZLPBF, IRF1010ZPBF, IRF1010ZSPBF, IRF1018EPBF, IRF1018ESLPBF, IRF1018ESPBF, IRF1104PBF, IRF120, 75N75, IRF122, IRF123, IRF1302S, IRF130SMD, IRF130SMD05, IRF130SMD05DSG, IRF131, IRF1310NPBF
Keywords - IRF121 MOSFET specs
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