All MOSFET. IRF123 Datasheet

 

 

IRF123 Datasheet and Replacement


   Type Designator: IRF123
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO3
 

 IRF123 substitution

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IRF123 Datasheet (PDF)

 ..1. Size:170K  fairchild semi
 irf120 irf121 irf122 irf123 mtp10n08.pdf pdf_icon

IRF123

 9.1. Size:50K  international rectifier
 irf1205.pdf pdf_icon

IRF123

PD - 93803PROVISIONALIRF1205HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 55V 175 C Operating Temprature Fast SwitchingRDS(on) = 0.027 Fully Avalanche RatedGID = 41A SDescriptionFifth Generation MOSFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area

 9.2. Size:1313K  cn sps
 smirf12n65.pdf pdf_icon

IRF123

SMIRF12N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75(VGS=10V, ID=6A) on-state resistance, provide superior

Datasheet: IRF1010ZSPBF , IRF1018EPBF , IRF1018ESLPBF , IRF1018ESPBF , IRF1104PBF , IRF120 , IRF121 , IRF122 , IRFB31N20D , IRF1302S , IRF130SMD , IRF130SMD05 , IRF130SMD05DSG , IRF131 , IRF1310NPBF , IRF1310NSPBF , IRF1312PBF .

History: RU40P4H

Keywords - IRF123 MOSFET datasheet

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