IRF123 Datasheet. Specs and Replacement

Type Designator: IRF123

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO3

IRF123 substitution

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IRF123 datasheet

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Detailed specifications: IRF1010ZSPBF, IRF1018EPBF, IRF1018ESLPBF, IRF1018ESPBF, IRF1104PBF, IRF120, IRF121, IRF122, IRFB31N20D, IRF1302S, IRF130SMD, IRF130SMD05, IRF130SMD05DSG, IRF131, IRF1310NPBF, IRF1310NSPBF, IRF1312PBF

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