IRF130SMD05DSG Datasheet. Specs and Replacement

Type Designator: IRF130SMD05DSG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: SMD05

IRF130SMD05DSG substitution

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IRF130SMD05DSG datasheet

 ..1. Size:23K  semelab
 irf130smd05dsg.pdf pdf_icon

IRF130SMD05DSG

IRF130SMD05DSGN MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET 7.54 (0.296) FOR HI REL 0.76 (0.030) min. 3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. APPLICATIONS 0.127 (0.005) 1 3 VDSS 100V ID(cont) 11A 2 RDS(on) 0.19 FEATURES 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) HERMETICALLY SEALED 0.50 (0.020) max. 7.26 (0.286) ... See More ⇒

 3.1. Size:24K  semelab
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IRF130SMD05DSG

IRF130SMD05N IRFN130SMD05 MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET FOR HI REL APPLICATIONS ! VDSS 100V ID(cont) 11A RDS(on) 0.19 FEATURES HERMETICALLY SEALED ... See More ⇒

 5.1. Size:22K  semelab
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IRF130SMD05DSG

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 8.1. Size:523K  international rectifier
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IRF130SMD05DSG

PD - 94591 AUTOMOTIVE MOSFET IRF1302 Benefits HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 20V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 4.0m G Repetitive Avalanche Allowed up to Tjmax ID = 180A S Description Specifically designed for Automotive applications, this Stripe Planar ... See More ⇒

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Detailed specifications: IRF1104PBF, IRF120, IRF121, IRF122, IRF123, IRF1302S, IRF130SMD, IRF130SMD05, IRFZ48N, IRF131, IRF1310NPBF, IRF1310NSPBF, IRF1312PBF, IRF132, IRF1324LPBF, IRF1324PBF, IRF1324S-7PPBF

Keywords - IRF130SMD05DSG MOSFET specs

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