Справочник MOSFET. IRF130SMD05DSG

 

IRF130SMD05DSG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF130SMD05DSG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 28.5 nC
   trⓘ - Время нарастания: 75 ns
   Cossⓘ - Выходная емкость: 240 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
   Тип корпуса: SMD05

 Аналог (замена) для IRF130SMD05DSG

 

 

IRF130SMD05DSG Datasheet (PDF)

 ..1. Size:23K  semelab
 irf130smd05dsg.pdf

IRF130SMD05DSG IRF130SMD05DSG

IRF130SMD05DSGNMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET7.54 (0.296)FOR HIREL0.76 (0.030)min.3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max.APPLICATIONS 0.127 (0.005)1 3VDSS 100VID(cont) 11A2RDS(on) 0.19FEATURES 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020) HERMETICALLY SEALED 0.50 (0.020)max.7.26 (0.286)

 3.1. Size:24K  semelab
 irf130smd05.pdf

IRF130SMD05DSG IRF130SMD05DSG

IRF130SMD05NIRFN130SMD05MECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET FOR HIREL APPLICATIONS !VDSS 100VID(cont) 11ARDS(on) 0.19 FEATURES HERMETICALLY SEALED

 5.1. Size:22K  semelab
 irf130smd.pdf

IRF130SMD05DSG IRF130SMD05DSG

IRF130SMDMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET FOR HIREL APPLICATIONS !VDSS 100VID(cont) 11ARDS(on) 0.19FEATURES HERMETICALLY SEALED SIMPLE DRIVE REQUIREMENTS

 8.1. Size:523K  international rectifier
 irf1302.pdf

IRF130SMD05DSG IRF130SMD05DSG

PD - 94591AUTOMOTIVE MOSFETIRF1302BenefitsHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 20V Dynamic dv/dt Rating 175C Operating Temperature Fast SwitchingRDS(on) = 4.0mG Repetitive Avalanche Allowed up to TjmaxID = 180A SDescriptionSpecifically designed for Automotive applications, this Stripe Planar

 8.2. Size:147K  international rectifier
 2n6756 irf130.pdf

IRF130SMD05DSG IRF130SMD05DSG

PD - 90333FIRF130REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756HEXFETTRANSISTORS JANTXV2N6756THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF130 100V 0.18 14AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique process

 8.3. Size:232K  international rectifier
 irf1302s.pdf

IRF130SMD05DSG IRF130SMD05DSG

PD - 94520AUTOMOTIVE MOSFETIRF1302SIRF1302LBenefits Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 20V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.0mGID = 174ASDescriptionSpecifically designed for Automotive applications, this St

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