All MOSFET. IRF1404ZSPBF Datasheet

 

IRF1404ZSPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF1404ZSPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 100 nC
   trⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 1030 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: TO-263

 IRF1404ZSPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF1404ZSPBF Datasheet (PDF)

 ..1. Size:298K  international rectifier
irf1404zlpbf irf1404zpbf irf1404zspbf.pdf

IRF1404ZSPBF
IRF1404ZSPBF

PD - 96040CIRF1404ZPbFIRF1404ZSPbFIRF1404ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel 175C Operating Temperature V(BR)DSS 40VDl Fast SwitchingRDS(on) typ. 2.7ml Repetitive Avalanche Allowed up to Tjmax max. 3.7ml Lead-FreeGID (Silicon Limited) 180A DescriptionID (Package Limited) 120A SThis HEXFET P

 ..2. Size:302K  infineon
irf1404zpbf irf1404zspbf irf1404zlpbf.pdf

IRF1404ZSPBF
IRF1404ZSPBF

PD - 96040CIRF1404ZPbFIRF1404ZSPbFIRF1404ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel 175C Operating Temperature V(BR)DSS 40VDl Fast SwitchingRDS(on) typ. 2.7ml Repetitive Avalanche Allowed up to Tjmax max. 3.7ml Lead-FreeGID (Silicon Limited) 180A DescriptionID (Package Limited) 120A SThis HEXFET P

 5.1. Size:362K  international rectifier
auirf1404zstrl.pdf

IRF1404ZSPBF
IRF1404ZSPBF

PD - 97460AUTOMOTIVE GRADEAUIRF1404ZAUIRF1404ZSAUIRF1404ZLFeatures Advanced Process TechnologyHEXFET Power MOSFET Low On-ResistanceDV(BR)DSS 40V 175C Operating Temperature Fast SwitchingRDS(on) max.3.7m Repetitive Avalanche Allowed up to TjmaxGID (Silicon Limited) Lead-Free, RoHS Compliant 180A Automotive Qualified *SID (Package Limited)160A

 5.2. Size:383K  infineon
auirf1404z auirf1404zs auirf1404zl.pdf

IRF1404ZSPBF
IRF1404ZSPBF

AUIRF1404Z AUIRF1404ZS AUTOMOTIVE GRADE AUIRF1404ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) max. 3.7m 175C Operating Temperature ID (Silicon Limited) 180A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Auto

 5.3. Size:258K  inchange semiconductor
irf1404zs.pdf

IRF1404ZSPBF
IRF1404ZSPBF

Isc N-Channel MOSFET Transistor IRF1404ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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