STI19NM65N MOSFET. Datasheet pdf. Equivalent
Type Designator: STI19NM65N
Marking Code: 19NM65N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 15.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 55 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: I2PAK
STI19NM65N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STI19NM65N Datasheet (PDF)
stb19nm65n sti19nm65n stf19nm65n stp19nm65n stw19nm65n.pdf
STF19NM65N-STI19NM65N-STW19NM65NSTB19NM65N - STP19NM65NN-channel 650 V - 0.25 - 15.5 A - TO-220/FP-D2/I2PAK-TO-247second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) max ID(@Tjmax)323121STB19NM65N 710 V
stb19nm65n stf19nm65n sti19nm65n stp19nm65n stw19nm65n.pdf
STF19NM65N-STI19NM65N-STW19NM65NSTB19NM65N - STP19NM65NN-channel 650 V - 0.25 - 15.5 A - TO-220/FP-D2/I2PAK-TO-247second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) max ID(@Tjmax)323121STB19NM65N 710 V
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
