STI20N65M5 Datasheet. Specs and Replacement
Type Designator: STI20N65M5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 38 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: I2PAK
STI20N65M5 substitution
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STI20N65M5 datasheet
stb20n65m5 sti20n65m5 stp20n65m5 stw20n65m5.pdf
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages Datasheet production data Features TAB TAB VDS @ RDS(on) Order codes ID 2 TJmax max 3 3 2 1 1 STB20N65M5 D2PAK I2PAK STI20N65M5 710 V 0.19 18 A TAB STP20N65M5 STW20N65M5 Worldwide best RDS(on) * area 3 2 ... See More ⇒
stb200n6f3 sti200n6f3 stp200n6f3.pdf
STB200N6F3, STI200N6F3 STP200N6F3 N-channel 60 V, 3 m , 120 A D2PAK, TO-220, I2PAK STripFET Power MOSFET Features Type VDSS RDS(on) ID Pw STB200N6F3 60 V ... See More ⇒
Detailed specifications: STI150N10F7, STI15NM60N, STI15NM60ND, STI16NM50N, STI17NF25, STI18N65M2, STI18N65M5, STI19NM65N, IRFB4115, STI21NM60ND, STI23NM60N, STI24N60M2, STI260N6F6, STI33N60M2, STI33N65M2, STI360N4F6, STI400N4F6
Keywords - STI20N65M5 MOSFET specs
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