All MOSFET. STI260N6F6 Datasheet

 

STI260N6F6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STI260N6F6
   Marking Code: 260N6F6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 183 nC
   trⓘ - Rise Time: 165 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: I2PAK

 STI260N6F6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STI260N6F6 Datasheet (PDF)

 ..1. Size:703K  st
 sti260n6f6 stp260n6f6.pdf

STI260N6F6 STI260N6F6

STI260N6F6STP260N6F6N-channel 60 V, 0.0024 , 120 A TO-220, IPAKSTripFET VI DeepGATE Power MOSFETFeaturesOrder codes VDSS RDS(on) max IDSTP260N6F660 V

 ..2. Size:750K  st
 sti260n6f6 stp260n6f6.pdf

STI260N6F6 STI260N6F6

STI260N6F6STP260N6F6N-channel 60 V, 0.0024 , 120 A STripFET VI DeepGATEPower MOSFET in TO-220 and IPAK packagesFeaturesOrder codes VDSS RDS(on) max IDTABTABSTI260N6F660 V

 9.1. Size:743K  st
 sti26nm60n.pdf

STI260N6F6 STI260N6F6

STI26NM60NN-channel 600 V, 0.135 typ., 20 A MDmesh II Power MOSFETs in a I2PAK packageDatasheet - obsolete productFeatures Order code VDS RDS(on) max IDTABSTI26NM60N 600 V 0.165 20 A 100% avalanche tested Low input capacitance and gate charge32 Low gate input resistance12I PAKApplications Switching applicationsDescriptionFigure 1. Inter

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top