STI40N65M2 MOSFET. Datasheet pdf. Equivalent
Type Designator: STI40N65M2
Marking Code: 40N65M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 32 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 56.5 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 102 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: I2PAK
STI40N65M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STI40N65M2 Datasheet (PDF)
sti40n65m2 stp40n65m2.pdf
STI40N65M2, STP40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in IPAK and TO-220 packages Datasheet - production data Features TAB TABOrder code V R max. I DS DS(on) DSTI40N65M2 650 V 0.099 32 A STP40N65M2 3 Extremely low gate charge 232 1 Excellent output capacitance (COSS) profile 1IPAK TO-220 100% avalanche tested
sti400n4f6 stp400n4f6.pdf
STI400N4F6, STP400N4F6N-channel 40 V, 120 A STripFET VI DeepGATE Power MOSFET in IPAK and TO-220 packagesDatasheet - preliminary dataFeaturesOrder codes VDSS RDS(on) max IDTABTABSTI400N4F640 V
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