STI40N65M2 Datasheet and Replacement
Type Designator: STI40N65M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 32 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 102 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: I2PAK
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STI40N65M2 Datasheet (PDF)
sti40n65m2 stp40n65m2.pdf

STI40N65M2, STP40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in IPAK and TO-220 packages Datasheet - production data Features TAB TABOrder code V R max. I DS DS(on) DSTI40N65M2 650 V 0.099 32 A STP40N65M2 3 Extremely low gate charge 232 1 Excellent output capacitance (COSS) profile 1IPAK TO-220 100% avalanche tested
sti400n4f6 stp400n4f6.pdf

STI400N4F6, STP400N4F6N-channel 40 V, 120 A STripFET VI DeepGATE Power MOSFET in IPAK and TO-220 packagesDatasheet - preliminary dataFeaturesOrder codes VDSS RDS(on) max IDTABTABSTI400N4F640 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: INK0012AU1 | HLML6401 | FDWS9510L-F085 | UT3N06G-TN3-R | MTN003N02Y3 | IXTP7N60PM | AP85T03GH-HF
Keywords - STI40N65M2 MOSFET datasheet
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History: INK0012AU1 | HLML6401 | FDWS9510L-F085 | UT3N06G-TN3-R | MTN003N02Y3 | IXTP7N60PM | AP85T03GH-HF



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