All MOSFET. STI45N10F7 Datasheet

 

STI45N10F7 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STI45N10F7
   Marking Code: 45N10F7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: I2PAK

 STI45N10F7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STI45N10F7 Datasheet (PDF)

 ..1. Size:1166K  st
 std45n10f7 sti45n10f7 stp45n10f7.pdf

STI45N10F7 STI45N10F7

STD45N10F7, STI45N10F7, STP45N10F7N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packagesDatasheet - production dataFeaturesTABTABRDS(on) 3 Order codes VDS ID PTOTmax.(1)13 STD45N10F7DPAK212 STI45N10F7 100 V 0.018 45 A 60 WI PAKTABSTP45N10F71. @ VGS = 10 V Ultra low on-resistance32

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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