STK850 MOSFET. Datasheet pdf. Equivalent
Type Designator: STK850
Marking Code: K850
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 5.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 24.5 nC
trⓘ - Rise Time: 57 nS
Cossⓘ - Output Capacitance: 940 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: POLARPAK
STK850 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STK850 Datasheet (PDF)
stk850.pdf
STK850N-channel 30V - 0.0024 - 30A - PolarPAKSTripFET Power MOSFETFeaturesVDSS RDS(on) RDS(on)*Qg PTOTTypeSTK850 30V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: NP80N04EHE
History: NP80N04EHE
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918