STL19N65M5 Datasheet. Specs and Replacement

Type Designator: STL19N65M5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: POWERFLAT8X8HV

STL19N65M5 substitution

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STL19N65M5 datasheet

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STL19N65M5

STL19N65M5 N-channel 650 V, 0.215 typ., 12.5 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code VDS RDS(on)max. ID S(3) S(3) STL19N65M5 710 V 0.240 12.5 A(1) S(3) G(1) 1. The value is rated according to Rthj-case and limited by package. D(2) Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt ca... See More ⇒

Detailed specifications: STL160NS3LLH7, STL16N60M2, STL16N65M2, STL17N65M5, STL180N4LLF6, STL18N60M2, STL18N65M2, STL18N65M5, IRFZ24N, STL20DN10F7, STL20NM20N, STL220N3LLH7, STL22N65M5, STL23NM50N, STL23NS3LLH7, STL24N60M2, STL260N3LLH6

Keywords - STL19N65M5 MOSFET specs

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