All MOSFET. STL19N65M5 Datasheet

 

STL19N65M5 Datasheet and Replacement


   Type Designator: STL19N65M5
   Marking Code: 19N65M5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 31 nC
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: POWERFLAT8X8HV
 

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STL19N65M5 Datasheet (PDF)

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STL19N65M5

STL19N65M5N-channel 650 V, 0.215 typ., 12.5 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV packageDatasheet - production dataFeatures Order code VDS RDS(on)max. IDS(3)S(3)STL19N65M5 710 V 0.240 12.5 A(1)S(3)G(1)1. The value is rated according to Rthj-case and limited by package.D(2) Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt ca

Datasheet: STL160NS3LLH7 , STL16N60M2 , STL16N65M2 , STL17N65M5 , STL180N4LLF6 , STL18N60M2 , STL18N65M2 , STL18N65M5 , AON6380 , STL20DN10F7 , STL20NM20N , STL220N3LLH7 , STL22N65M5 , STL23NM50N , STL23NS3LLH7 , STL24N60M2 , STL260N3LLH6 .

Keywords - STL19N65M5 MOSFET datasheet

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