STL20DN10F7 Datasheet. Specs and Replacement

Type Designator: STL20DN10F7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 112 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.067 Ohm

Package: POWERFLAT5X6

STL20DN10F7 substitution

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STL20DN10F7 datasheet

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STL20DN10F7

STL20DN10F7 Dual N-channel 100 V, 0.059 typ., 5 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 double island package Datasheet - production data Features 1 Order code VDS RDS(on) max ID 4 STL20DN10F7 100 V 0.067 5 A 1 8 N-channel enhancement mode 4 5 Lower RDS(on) x area vs previous generation 100% avalanche rated PowerFLAT 5x6 double isl... See More ⇒

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STL20DN10F7

STL20NM20N N-CHANNEL 200V - 0.088 - 20A PowerFLAT ULTRA LOW GATE CHARGE MDmesh II MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID STL20NM20N 200 V ... See More ⇒

Detailed specifications: STL16N60M2, STL16N65M2, STL17N65M5, STL180N4LLF6, STL18N60M2, STL18N65M2, STL18N65M5, STL19N65M5, 2N60, STL20NM20N, STL220N3LLH7, STL22N65M5, STL23NM50N, STL23NS3LLH7, STL24N60M2, STL260N3LLH6, STL2N80K5

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