All MOSFET. STL20DN10F7 Datasheet

 

STL20DN10F7 Datasheet and Replacement


   Type Designator: STL20DN10F7
   Marking Code: 20DN10F7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 7.8 nC
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 112 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.067 Ohm
   Package: POWERFLAT5X6
 

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STL20DN10F7 Datasheet (PDF)

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STL20DN10F7

STL20DN10F7Dual N-channel 100 V, 0.059 typ., 5 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 double island packageDatasheet - production dataFeatures1Order code VDS RDS(on) max ID4STL20DN10F7 100 V 0.067 5 A18 N-channel enhancement mode45 Lower RDS(on) x area vs previous generation 100% avalanche ratedPowerFLAT 5x6double isl

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STL20DN10F7

STL20NM20NN-CHANNEL 200V - 0.088 - 20A PowerFLATULTRA LOW GATE CHARGE MDmesh II MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) IDSTL20NM20N 200 V

Datasheet: STL16N60M2 , STL16N65M2 , STL17N65M5 , STL180N4LLF6 , STL18N60M2 , STL18N65M2 , STL18N65M5 , STL19N65M5 , IRF830 , STL20NM20N , STL220N3LLH7 , STL22N65M5 , STL23NM50N , STL23NS3LLH7 , STL24N60M2 , STL260N3LLH6 , STL2N80K5 .

History: NCE01H11

Keywords - STL20DN10F7 MOSFET datasheet

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