STL22N65M5 Datasheet. Specs and Replacement

Type Designator: STL22N65M5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 2.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm

Package: POWERFLAT8X8HV

STL22N65M5 substitution

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STL22N65M5 datasheet

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 stl22n65m5.pdf pdf_icon

STL22N65M5

STL22N65M5 N-channel 650 V, 0.180 typ., 15 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV package Datasheet production data Features VDS @ RDS(on) Order code ID S(2) Bottom view TJmax max S(2) S(2) G(1) STL22N65M5 710 V 0.210 15 A(1) D(3) 1. The value is rated according to Rthj-case and limited by package. 100% avalanche tested PowerFLAT 8x8 HV Low... See More ⇒

 8.1. Size:324K  st
 stl22nf10.pdf pdf_icon

STL22N65M5

STL22NF10 N-CHANNEL 100V - 0.055 - 22A PowerFLAT LOW GATE CHARGE STripFET II MOSFET TYPE VDSS RDS(on) ID STL22NF10 100 V ... See More ⇒

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 stl220n3llh7.pdf pdf_icon

STL22N65M5

STL220N3LLH7 N-channel 30 V, 0.00081 typ., 50 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max ID STL220N3LLH7 30 V 0.0011 50 A Very low on-resistance 1 Very low Qg 2 3 4 High avalanche ruggedness PowerFLAT 5x6 Applications Switching applications Description Figure ... See More ⇒

Detailed specifications: STL180N4LLF6, STL18N60M2, STL18N65M2, STL18N65M5, STL19N65M5, STL20DN10F7, STL20NM20N, STL220N3LLH7, 75N75, STL23NM50N, STL23NS3LLH7, STL24N60M2, STL260N3LLH6, STL2N80K5, STL30N10F7, STL30P3LLH6, STL31N65M5

Keywords - STL22N65M5 MOSFET specs

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