STL22N65M5 Datasheet and Replacement
Type Designator: STL22N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 2.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 38 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
Package: POWERFLAT8X8HV
STL22N65M5 substitution
STL22N65M5 Datasheet (PDF)
stl22n65m5.pdf

STL22N65M5N-channel 650 V, 0.180 typ., 15 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV packageDatasheet production dataFeaturesVDS @ RDS(on) Order code IDS(2) Bottom viewTJmax maxS(2)S(2)G(1)STL22N65M5 710 V 0.210 15 A(1)D(3)1. The value is rated according to Rthj-case and limited by package. 100% avalanche testedPowerFLAT 8x8 HV Low
stl22nf10.pdf

STL22NF10N-CHANNEL 100V - 0.055 - 22A PowerFLATLOW GATE CHARGE STripFET II MOSFETTYPE VDSS RDS(on) IDSTL22NF10 100 V
stl220n3llh7.pdf

STL220N3LLH7N-channel 30 V, 0.00081 typ., 50 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL220N3LLH7 30 V 0.0011 50 A Very low on-resistance1 Very low Qg234 High avalanche ruggednessPowerFLAT5x6Applications Switching applicationsDescriptionFigure
Datasheet: STL180N4LLF6 , STL18N60M2 , STL18N65M2 , STL18N65M5 , STL19N65M5 , STL20DN10F7 , STL20NM20N , STL220N3LLH7 , IRF520 , STL23NM50N , STL23NS3LLH7 , STL24N60M2 , STL260N3LLH6 , STL2N80K5 , STL30N10F7 , STL30P3LLH6 , STL31N65M5 .
History: ME13N10A-G | STL24N60M2 | 2SK4113 | FQAF9P25 | SWB086R68E7T | STD100N10F7 | SWB078R08ET
Keywords - STL22N65M5 MOSFET datasheet
STL22N65M5 cross reference
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History: ME13N10A-G | STL24N60M2 | 2SK4113 | FQAF9P25 | SWB086R68E7T | STD100N10F7 | SWB078R08ET



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