All MOSFET. STL30N10F7 Datasheet

 

STL30N10F7 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STL30N10F7
   Marking Code: 30N10F7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 4.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: POWERFLAT5X6

 STL30N10F7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STL30N10F7 Datasheet (PDF)

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 stl30n10f7.pdf

STL30N10F7 STL30N10F7

STL30N10F7N-channel 100 V, 0.027 typ., 8 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max. ID PTOTSTL30N10F7 100 V 0.035 8 A 4.8 W(1)121. The value is rated according to Rthj-pcb.34 Ultra low on-resistancePowerFLAT 5x6 100% avalanche testedApplications Switchi

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 stl30nf3ll.pdf

STL30N10F7 STL30N10F7

STL30NF3LLN-CHANNEL 30V - 0.008 - 30A PowerFLATLOW GATE CHARGE STripFET MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTL30NF3LL 30 V

 9.1. Size:1060K  st
 stl30p3llh6.pdf

STL30N10F7 STL30N10F7

STL30P3LLH6P-channel 30 V, 0.024 typ., 9 A STripFET VI DeepGATEPower MOSFET in a PowerFLAT 5x6 packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on) max ID PTOTSTL30P3LLH6 30 V 0.03 9 A 4.8 W RDS(on) * Qg industry benchmark123 Extremely low on-resistance RDS(on)4 High avalanche ruggedness Low gate drive power lossesPowerFLAT

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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