All MOSFET. STL30N10F7 Datasheet

 

STL30N10F7 Datasheet and Replacement


   Type Designator: STL30N10F7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 4.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: POWERFLAT5X6
 

 STL30N10F7 substitution

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STL30N10F7 Datasheet (PDF)

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 stl30n10f7.pdf pdf_icon

STL30N10F7

STL30N10F7N-channel 100 V, 0.027 typ., 8 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max. ID PTOTSTL30N10F7 100 V 0.035 8 A 4.8 W(1)121. The value is rated according to Rthj-pcb.34 Ultra low on-resistancePowerFLAT 5x6 100% avalanche testedApplications Switchi

 8.1. Size:169K  st
 stl30nf3ll.pdf pdf_icon

STL30N10F7

STL30NF3LLN-CHANNEL 30V - 0.008 - 30A PowerFLATLOW GATE CHARGE STripFET MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTL30NF3LL 30 V

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 stl30p3llh6.pdf pdf_icon

STL30N10F7

STL30P3LLH6P-channel 30 V, 0.024 typ., 9 A STripFET VI DeepGATEPower MOSFET in a PowerFLAT 5x6 packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on) max ID PTOTSTL30P3LLH6 30 V 0.03 9 A 4.8 W RDS(on) * Qg industry benchmark123 Extremely low on-resistance RDS(on)4 High avalanche ruggedness Low gate drive power lossesPowerFLAT

Datasheet: STL20NM20N , STL220N3LLH7 , STL22N65M5 , STL23NM50N , STL23NS3LLH7 , STL24N60M2 , STL260N3LLH6 , STL2N80K5 , IRFZ48N , STL30P3LLH6 , STL31N65M5 , STL33N60M2 , STL34N65M5 , STL35N6F3 , STL36N55M5 , STL38N65M5 , STL3N10F7 .

History: 2SJ589LS

Keywords - STL30N10F7 MOSFET datasheet

 STL30N10F7 cross reference
 STL30N10F7 equivalent finder
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 STL30N10F7 replacement

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