STL31N65M5 Datasheet. Specs and Replacement

Type Designator: STL31N65M5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.162 Ohm

Package: POWERFLAT8X8HV

STL31N65M5 substitution

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STL31N65M5 datasheet

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STL31N65M5

STL31N65M5 N-channel 650 V, 0.135 typ., 15 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code VDS RDS(on) max ID S(2) Bottom view S(2) S(2) STL31N65M5 710 V 0.162 15 A(1) G(1) 1. The value is rated according to Rthj-case and limited by D(3) package. Worldwide best RDS(on) * area Higher VDSS rating and high d... See More ⇒

Detailed specifications: STL22N65M5, STL23NM50N, STL23NS3LLH7, STL24N60M2, STL260N3LLH6, STL2N80K5, STL30N10F7, STL30P3LLH6, IRF830, STL33N60M2, STL34N65M5, STL35N6F3, STL36N55M5, STL38N65M5, STL3N10F7, STL3NK40, STL3NM60N

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs