STL33N60M2 Datasheet and Replacement
Type Designator: STL33N60M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9.6 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
Package: POWERFLAT8X8HV
STL33N60M2 substitution
STL33N60M2 Datasheet (PDF)
stl33n60m2.pdf

STL33N60M2 N-channel 600 V, 0.115 typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code VDS @ T R I Jmax DS(on)max DSTL33N60M2 650 V 0.135 22 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications Switching app
stl33n60dm2.pdf

STL33N60DM2 N-channel 600 V, 0.115 typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features VDS @ Order code RDS(on)max ID T Jmax5STL33N60DM2 650 V 0.140 21 A 432 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance PowerFLAT 8x8 HV 100% ava
Datasheet: STL23NM50N , STL23NS3LLH7 , STL24N60M2 , STL260N3LLH6 , STL2N80K5 , STL30N10F7 , STL30P3LLH6 , STL31N65M5 , 60N06 , STL34N65M5 , STL35N6F3 , STL36N55M5 , STL38N65M5 , STL3N10F7 , STL3NK40 , STL3NM60N , STL40C30H3LL .
Keywords - STL33N60M2 MOSFET datasheet
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History: MCQ4822 | PMV65XPEA



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