STL33N60M2 Datasheet. Specs and Replacement

Type Designator: STL33N60M2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.6 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm

Package: POWERFLAT8X8HV

STL33N60M2 substitution

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STL33N60M2 datasheet

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 stl33n60m2.pdf pdf_icon

STL33N60M2

STL33N60M2 N-channel 600 V, 0.115 typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code V DS @ T R I Jmax DS(on)max D STL33N60M2 650 V 0.135 22 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications Switching app... See More ⇒

 6.1. Size:778K  st
 stl33n60dm2.pdf pdf_icon

STL33N60M2

STL33N60DM2 N-channel 600 V, 0.115 typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features V DS @ Order code RDS(on)max ID T Jmax 5 STL33N60DM2 650 V 0.140 21 A 4 3 2 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance PowerFLAT 8x8 HV 100% ava... See More ⇒

Detailed specifications: STL23NM50N, STL23NS3LLH7, STL24N60M2, STL260N3LLH6, STL2N80K5, STL30N10F7, STL30P3LLH6, STL31N65M5, IRLB3034, STL34N65M5, STL35N6F3, STL36N55M5, STL38N65M5, STL3N10F7, STL3NK40, STL3NM60N, STL40C30H3LL

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