All MOSFET. STL33N60M2 Datasheet

 

STL33N60M2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STL33N60M2
   Marking Code: 33N60M2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45.5 nC
   trⓘ - Rise Time: 9.6 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
   Package: POWERFLAT8X8HV

 STL33N60M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STL33N60M2 Datasheet (PDF)

 ..1. Size:850K  st
 stl33n60m2.pdf

STL33N60M2 STL33N60M2

STL33N60M2 N-channel 600 V, 0.115 typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code VDS @ T R I Jmax DS(on)max DSTL33N60M2 650 V 0.135 22 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications Switching app

 6.1. Size:778K  st
 stl33n60dm2.pdf

STL33N60M2 STL33N60M2

STL33N60DM2 N-channel 600 V, 0.115 typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features VDS @ Order code RDS(on)max ID T Jmax5STL33N60DM2 650 V 0.140 21 A 432 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance PowerFLAT 8x8 HV 100% ava

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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