STL34N65M5 Datasheet and Replacement
Type Designator: STL34N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 3.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 8.7 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: POWERFLAT8X8HV
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STL34N65M5 Datasheet (PDF)
stl34n65m5.pdf
STL34N65M5N-channel 650 V, 0.099 typ., 22.5 A MDmesh V Power MOSFET in PowerFLAT 8x8 HV packageDatasheet - production dataFeaturesVDS @ RDS(on) Order code IDS(2) Bottom viewTJmax maxS(2)S(2)STL34N65M5 710 V 0.120 22.5 A(1)G(1)D(3)1. The value is rated according to Rthj-case and limited by package. 100% avalanche testedPowerFLAT 8x8 HV Lo
stl34nf06.pdf
STL34NF06N-CHANNEL 60V - 0.024 - 34APowerFLATLOW GATE CHARGE STripFETII MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTL34NF06 60 V
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: TT8K11 | 2N3797 | MMBF5457 | SVS11N70SD2 | 2SK403 | MP15N60EIF | BUK436W-800B
Keywords - STL34N65M5 MOSFET datasheet
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History: TT8K11 | 2N3797 | MMBF5457 | SVS11N70SD2 | 2SK403 | MP15N60EIF | BUK436W-800B
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