STL3N10F7 Datasheet. Specs and Replacement

Type Designator: STL3N10F7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 112 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: POWERFLAT2X2

STL3N10F7 substitution

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STL3N10F7 datasheet

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STL3N10F7

STL3N10F7 N-channel 100 V, 0.062 typ., 4 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 2x2 package Datasheet - production data Features Order code VDS RDS(on) max ID 1 2 STL3N10F7 100 V 0.07 4 A 3 N-channel enhancement mode 6 1 5 2 Low gate charge 4 3 100% avalanche rated PowerFLAT 2x2 Applications Switching applications Descripti... See More ⇒

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 stl3nk40.pdf pdf_icon

STL3N10F7

STL3NK40 N-channel 400 V, 4.5 typ., 0.43 A, SuperMESH Power MOSFET in a PowerFLAT 5x5 package Datasheet - production data Features Order code VDS RDS(on) max ID PTOT 6 7 7 8 5 5 STL3NK40 400 V 5.5 0.43 A 2.5 W 11 4 4 Extremely high dv/dt capability 12 100% avalanche rated 1 1 12 14 Gate charge minimized Type C Type S Very low intrinsic capaci... See More ⇒

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STL3N10F7

STL3NM60N N-channel 600 V, 1.5 , 2.2 A MDmesh II Power MOSFET in a PowerFLAT 3.3 x 3.3 HV package Datasheet - production data Features Order code RDS(on) max. ID 1 2 3 4 STL3NM60N 1.8 2.2 A 100% avalanche tested 8 5 7 6 6 7 Low input capacitance and gate charge 5 8 Low gate input resistance PowerFLAT 3.3x3.3 HV Application Switching appli... See More ⇒

Detailed specifications: STL30N10F7, STL30P3LLH6, STL31N65M5, STL33N60M2, STL34N65M5, STL35N6F3, STL36N55M5, STL38N65M5, EMB04N03H, STL3NK40, STL3NM60N, STL40C30H3LL, STL40N10F7, STL40N75LF3, STL42P4LLF6, STL42P6LLF6, STL45N65M5

Keywords - STL3N10F7 MOSFET specs

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