STL3N10F7 MOSFET. Datasheet pdf. Equivalent
Type Designator: STL3N10F7
Marking Code: ST3N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.8 nC
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 112 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: POWERFLAT2X2
STL3N10F7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STL3N10F7 Datasheet (PDF)
stl3n10f7.pdf
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stl3nk40.pdf
STL3NK40N-channel 400 V, 4.5 typ., 0.43 A, SuperMESH Power MOSFET in a PowerFLAT 5x5 packageDatasheet - production dataFeatures Order code VDS RDS(on) max ID PTOT67 7855STL3NK40 400 V 5.5 0.43 A 2.5 W1144 Extremely high dv/dt capability12 100% avalanche rated11 1214 Gate charge minimizedType C Type S Very low intrinsic capaci
stl3nm60n.pdf
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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: FDD8896
History: FDD8896
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918