All MOSFET. STL4P2UH7 Datasheet

 

STL4P2UH7 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STL4P2UH7
   Marking Code: 4L2U
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.8 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: POWERFLAT2X2

 STL4P2UH7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STL4P2UH7 Datasheet (PDF)

 ..1. Size:420K  st
 stl4p2uh7.pdf

STL4P2UH7 STL4P2UH7

STL4P2UH7P-channel 20 V, 0.087 typ., 4 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 2x2 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max ID12 STL4P2UH7 20 V 0.1 @ 4.5 V 4 A3 Ultra logic level6152 Extremely low on-resistance RDS(on)43 High avalanche ruggednessPowerFLAT 2x2 Low gate drive power losses

 9.1. Size:760K  st
 stl4p3llh6.pdf

STL4P2UH7 STL4P2UH7

STL4P3LLH6P-channel 30 V, 0.048 typ., 4 A STripFET H6 DeepGATEPower MOSFET in PowerFLAT 2x2 packageDatasheet - preliminary dataFeatures1Order code VDSS RDS(on) max. ID23STL4P3LLH6 30 V 0.056 at 10 V 4 A Very low on-resistance RDS(on)61 Very low gate charge5243 High avalanche ruggedness Low gate drive power lossPowerFLAT 2x2

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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