STL4P2UH7 Datasheet. Specs and Replacement

Type Designator: STL4P2UH7

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 66 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: POWERFLAT2X2

STL4P2UH7 substitution

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STL4P2UH7 datasheet

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 stl4p2uh7.pdf pdf_icon

STL4P2UH7

STL4P2UH7 P-channel 20 V, 0.087 typ., 4 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 2x2 package Datasheet - production data Features Order code VDS RDS(on) max ID 1 2 STL4P2UH7 20 V 0.1 @ 4.5 V 4 A 3 Ultra logic level 6 1 5 2 Extremely low on-resistance RDS(on) 4 3 High avalanche ruggedness PowerFLAT 2x2 Low gate drive power losses ... See More ⇒

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 stl4p3llh6.pdf pdf_icon

STL4P2UH7

STL4P3LLH6 P-channel 30 V, 0.048 typ., 4 A STripFET H6 DeepGATE Power MOSFET in PowerFLAT 2x2 package Datasheet - preliminary data Features 1 Order code VDSS RDS(on) max. ID 2 3 STL4P3LLH6 30 V 0.056 at 10 V 4 A Very low on-resistance RDS(on) 6 1 Very low gate charge 5 2 4 3 High avalanche ruggedness Low gate drive power loss PowerFLAT 2x2... See More ⇒

Detailed specifications: STL40C30H3LL, STL40N10F7, STL40N75LF3, STL42P4LLF6, STL42P6LLF6, STL45N65M5, STL4N10F7, STL4N80K5, IRF740, STL4P3LLH6, STL50NH3LL, STL51N3LLH5, STL55NH3LL, STL57N65M5, STL58N3LLH5, STL60N10F7, STL60NH3LL

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